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  ON Semiconductor Electronic Components Datasheet  

DTA143TET1 Datasheet

Bias Resistor Transistor

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DTA143TET1 pdf
DTA114EET1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTA114EET1
6A
10 10 3000/Tape & Reel
DTA124EET1
6B
22 22
DTA144EET1
6C
47 47
DTA114YET1
6D
10 47
DTA114TET1
6E
10
DTA143TET1 6F 4.7
DTA123EET1 6H 2.2 2.2
DTA143ZET1 6K 4.7 47
DTA124XET1
6L
22 47
DTA123JET1 6M 2.2 47
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114EET1/D


  ON Semiconductor Electronic Components Datasheet  

DTA143TET1 Datasheet

Bias Resistor Transistor

No Preview Available !

DTA143TET1 pdf
DTA114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation,
FR–4 Board (1.) @ TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (1.)
RθJA
Total Device Dissipation,
FR–4 Board (2.) @ TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (2.)
RθJA
Junction and Storage Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
ICBO
ICEO
IEBO
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector–Emitter Breakdown Voltage (3.) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (3.)
V(BR)CBO
V(BR)CEO
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
hFE
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTA123EET1
(IC = 10 mA, IB = 1 mA) DTA114TET1/DTA143TET1/
DTA143ZET1/DTA124XET1
VCE(sat)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
VOL
Max
200
1.6
600
300
2.4
400
–55 to +150
Min
50
50
35
60
80
80
160
160
8.0
80
80
80
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
60
100
140
140
250
250
15
140
130
140
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
0.18
0.13
0.2
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
http://onsemi.com
2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc


Part Number DTA143TET1
Description Bias Resistor Transistor
Maker ON Semiconductor
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