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  ON Semiconductor Electronic Components Datasheet  

DTA143E Datasheet

PNP SILICON BIAS RESISTOR TRANSISTOR

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DTA143E pdf
DTA114E SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
VCBO
VCEO
IC
PD
50 Vdc
50 Vdc
100 mAdc
350 mW
2.81 mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
RθJA
357 °C/W
Operating and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
TL
260 °C
10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
DTA114E DTA114E 10 10
DTA124E DTA124E 22 22
DTA144E DTA144E 47 47
DTA114Y DTA114Y 10 47
DTA114T
DTA114T
10
DTA143T
DTA143T
4.7
DTB113E DTB113E 1.0 1.0
DTA123E DTA123E 2.2 2.2
DTA143E DTA143E 4.7 4.7
DTA143Z DTA143Z 4.7 47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114E/D


  ON Semiconductor Electronic Components Datasheet  

DTA143E Datasheet

PNP SILICON BIAS RESISTOR TRANSISTOR

No Preview Available !

DTA143E pdf
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
ICBO
ICEO
IEBO
— 100 nAdc
— 500 nAdc
— 0.5 mAdc
— 0.2
— 0.1
— 0.2
— 0.9
— 1.9
— 4.3
— 2.3
— 1.5
— 0.18
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
— Vdc
Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO
50
— Vdc
ON CHARACTERISTICS (2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
hFE 35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
250
250
5.0
15
27
140
Collector–Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y
(IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E
(IC = 10 mA, IB = 5 mA) DTA123E
(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/
(IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
VCE(sat)
VOL
— 0.25 Vdc
Vdc
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
http://onsemi.com
2


Part Number DTA143E
Description PNP SILICON BIAS RESISTOR TRANSISTOR
Maker ON Semiconductor
Total Page 8 Pages
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