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  ON Semiconductor Electronic Components Datasheet  

DAP222T1G Datasheet

Common Anode Silicon Dual Switching Diodes

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DAP222T1G pdf
DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
Fast trr
Low CD
Available in 8 mm Tape and Reel
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 80 Vdc
Peak Reverse Voltage
VRM 80 Vdc
Forward Current
IF 100 mAdc
Peak Forward Current
IFM 300 mAdc
Peak Forward Surge Current
IFSM(1)
2.0
Adc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD 150 mW
TJ 150 °C
Tstg
−55 ~ + 150
°C
http://onsemi.com
ANODE
3
12
CATHODE
3
2
1
SC−75
CASE 463
STYLE 3
MARKING
DIAGRAMS
P9
3
1
2
SC−70
CASE 419
NB
ORDERING INFORMATION
Device
DAP222
DAP202U
DAP222T1
DAP222T1G
Package
SC−75
SC−70
SC−75
SC−75
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1
Publication Order Number:
DAP222/D


  ON Semiconductor Electronic Components Datasheet  

DAP222T1G Datasheet

Common Anode Silicon Dual Switching Diodes

No Preview Available !

DAP222T1G pdf
DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Reverse Voltage Leakage Current
IR
Forward Voltage
VF
Reverse Breakdown Voltage
VR
Diode Capacitance
CD
Reverse Recovery Time DAP222 trr(2)
DAP202U ttt(3)
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
VR = 70 V
IF = 100 mA
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR
Min Max Unit
— 0.1 mAdc
— 1.2 Vdc
80 — Vdc
— 3.5 pF
— 4.0 ns
− 10.0
100
10
1.0
0.1
0.2
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 85°C
TA = −40°C
TA = 25°C
10
1.0
0.1
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2 0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
50
1.75
1.5
1.25
1.0
0.75
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
8
http://onsemi.com
2


Part Number DAP222T1G
Description Common Anode Silicon Dual Switching Diodes
Maker ON Semiconductor
Total Page 6 Pages
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