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  ON Semiconductor Electronic Components Datasheet  

D45VH10 Datasheet

Complementary Silicon Power Transistors

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D44VH10 (NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
Fast Switching −
tf = 90 ns (Max)
Key Parameters Specified @ 100_C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
Complementary Pairs Simplify Circuit Designs
Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
VCEO
VCEV
VEB
IC
ICM
PD
80 Vdc
100 Vdc
7.0 Vdc
DataSheet4U.com
15 Adc
20
83 W
0.67 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
RqJC
RqJA
TL
1.5 _C/W
62.5 _C/W
275 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
http://onsemi.com
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 83 W
MARKING
DIAGRAM
4
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A−09
TO−220AB
D4xVH10
AYWWG
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
D44VH10
TO−220
50 Units/Rail
D44VH10G
TO−220
(Pb−Free)
50 Units/Rail
D45VH10
TO−220
50 Units/Rail
D45VH10G
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DataShee
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© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
DataSheet4 U .com
1
Publication Order Number:
D44VH/D


  ON Semiconductor Electronic Components Datasheet  

D45VH10 Datasheet

Complementary Silicon Power Transistors

No Preview Available !

D45VH10 pdf
www.DataSheet4U.com
D44VH10 (NPN), D45VH10 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min
Typ Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 mAdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Cutoff Current
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 7.0 Vdc, IC=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, IB = 0.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, IB = 0.8 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 3.0 Adc, TC = 100_C)
VCEO(sus)
ICEV
IEBO
80
hFE
D44VH10
D45VH10
D44VH10
D45VH10
VCE(sat)
35
20
− − Vdc
μAdc
− 10
− 100
− 10 μAdc
−−
−−
Vdc
− 0.4
− 1.0
− 0.8
− 1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎet4U.com
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 0.8 Adc)
(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100_C)
(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100_C)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
D44VH10
D45VH10
D44VH10
D45VH10
VBE(sat)
Vdc
− 1.2
− 1.0
− 1.1
− 1.5
DataSheet4U.com fT
D44VH10
D45VH10
Cob
− 50 − MHz
pF
− 120 −
− 275 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
(VCC = 20 Vdc, IC = 8.0 Adc,
IB1 = IB2 = 0.8 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
td − − 50 ns
tr − − 250
ts − − 700
tf − − 90
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Part Number D45VH10
Description Complementary Silicon Power Transistors
Maker ON Semiconductor
Total Page 6 Pages
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