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  ON Semiconductor Electronic Components Datasheet  

D45H Datasheet

Complementary Silicon Power Transistors

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D45H pdf
D44H Series (NPN),
D45H Series (PNP)
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
Low Collector−Emitter Saturation Voltage
Fast Switching Speeds
Complementary Pairs Simplifies Designs
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
VCEO
Vdc
60
80
Emitter Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Total Power Dissipation
@ TC = 25°C
@ TA = 25°C
VEB 5.0 Vdc
IC 10 Adc
ICM 20 Adc
PD W
70
2.0
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width 6.0 ms, Duty Cycle 50%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
RqJC
RqJA
TL
1.8 °C/W
62.5 °C/W
275 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 1
D4xHyyG
AYWW
D4xHyy
A
Y
WW
G
= Device Code
x = 4 or 5
yy = 8 or 11
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
D44H8G
TO−220
(Pb−Free)
50 Units/Rail
D44H11G
TO−220
(Pb−Free)
50 Units/Rail
D45H8G
TO−220
(Pb−Free)
50 Units/Rail
D45H11G
TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 13
1
Publication Order Number:
D44H/D


  ON Semiconductor Electronic Components Datasheet  

D45H Datasheet

Complementary Silicon Power Transistors

No Preview Available !

D45H pdf
D44H Series (NPN), D45H Series (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8 VCEO(sus)
D44H11, D45H11
60
80
− Vdc
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
ICES
− 10 mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
− 10 mA
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 2.0 Adc)
(VCE = 1.0 Vdc, IC = 4.0 Adc)
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
hFE
60
40
VCE(sat)
Vdc
− 1.0
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
DYNAMIC CHARACTERISTICS
VBE(sat)
− 1.5 Vdc
Collector Capacitance
(VCB = 10 Vdc, ftest = 1.0 MHz)
Ccb pF
D44H Series
90
D45H Series
160
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
fT MHz
D44H Series
− 50 −
D45H Series
− 40 −
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 Adc)
td + tr
ns
D44H Series
− 300 −
D45H Series
− 135 −
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
D44H Series
D45H Series
ts
ns
− 500 −
− 500 −
Fall Time
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
D44H Series
D45H Series
tf
ns
− 140 −
− 100 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number D45H
Description Complementary Silicon Power Transistors
Maker ON Semiconductor
Total Page 5 Pages
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