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  ON Semiconductor Electronic Components Datasheet  

D45C12 Datasheet

Complementary Silicon Power Transistor

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D45C12 pdf
D45C12 (PNP),
D44C12 (NPN)
Complementary Silicon
Power Transistor
The D45C12 and D44C12 areĂfor general purpose driver or
medium power output stages in CW or switching applications.
Features
ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max)
ăHigh ft for Good Frequency Response
ăLow Leakage Current
ăPb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage
VCEO 80 Vdc
VCES 90 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current - Continuous
Peak (Note 1)
VEB 5.0 Vdc
IC 4.0 Adc
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C
Total Power Dissipation @ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
PD
TJ, Tstg
30
1.67
-ā55 to 150
W
W/°C
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating Conditions is not implied. Extended exposure to stresses above the
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRecommended Operating Conditions may affect device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction-to-Case
RqJC
4.2 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction-to-Ambient
RqJA
75 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8 in from Case for 5 Sec
TL
275 °C
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
http://onsemi.com
4.0 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS 80 VOLTS
4
1
2
3
TO-220AB
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
D4xC12G
AYWW
1
Base
3
Emitter
2
Collector
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 2
1
Publication Order Number:
D45C12/D


  ON Semiconductor Electronic Components Datasheet  

D45C12 Datasheet

Complementary Silicon Power Transistor

No Preview Available !

D45C12 pdf
D45C12 (PNP), D44C12 (NPN)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1.0 Vdc, IC = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1.0 Vdc, IC = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Rated VCES, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 50 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Capacitance (VCB = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING TIMES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay and Rise Times (IC = 1.0 Adc, IB1 = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorageTime(IC=1.0Adc,IB1= IB2= 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time(IC=1.0Adc,IB1=IB2=0.1Adc)
Symbol
hFE
Min
40
20
20
Max Unit
-
120
-
-
Symbol Min Typ Max Unit
ICES
IEBO
- - 0.1 mA
- - 10 mA
VCE(sat)
VBE(sat)
- 0.135 0.5
- 0.85 1.3
Vdc
Vdc
Ccb
- 125 -
pF
fT - 40 - MHz
td + tr
ts
tf
- 50 75 ns
- 350 550 ns
- 50 75 ns
ORDERING INFORMATION
Device
Package
Shipping
D45C12
TO-220AB
D45C12G
D44C12
TO-220AB
(Pb-Free)
TO-220AB
50 Units / Rail
D44C12G
TO-220AB
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
200
VCE = 1.0 Vdc
TJ = 25°C
100
90
80
70
60
50
40
30
20
0.04
0.07 0.1
0.2 0.3 0.4 0.7 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical DC Current Gain
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
1.0
1.0 ms
10 ms
0.1 ms
dc 1.0 ms
TC 70°C
DUTY CYCLE 50%
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
http://onsemi.com
2


Part Number D45C12
Description Complementary Silicon Power Transistor
Maker ON Semiconductor
Total Page 3 Pages
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