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  ON Semiconductor Electronic Components Datasheet  

C106 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

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C106 pdf
C106 Series
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Features
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Max
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 5060 Hz, RGK = 1 kW,
TC = 40° to 110°C)
C106B
C106D, C106D1*
C106M, C106M1*
VDRM,
VRRM
200
400
600
V
On-State RMS Current
(180° Conduction Angles, TC = 80°C)
Average OnState Current
(180° Conduction Angles, TC = 80°C)
IT(RMS)
IT(AV)
4.0
2.55
A
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = +25°C)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
20
1.65
A
A2s
Forward Peak Gate Power
(Pulse Width v1.0 msec, TC = 80°C)
Forward Average Gate Power
(Pulse Width v1.0 msec, TC = 80°C)
Forward Peak Gate Current
(Pulse Width v1.0 msec, TC = 80°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
0.5
0.1
0.2
40 to
+110
W
W
A
°C
Storage Temperature Range
Tstg 40 to °C
+150
Mounting Torque (Note 2)
6.0 in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
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SCRs
4 A RMS, 200 600 Volts
G
AK
TO225AA
CASE 077
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
1. Cathode
2. Anode
3. Gate
YWW
C106xxG
Y
WW
C106xx
xx
G
= Year
= Work Week
= Device Code
= B, D, D1, M, M1
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 10
1
Publication Order Number:
C106/D


  ON Semiconductor Electronic Components Datasheet  

C106 Datasheet

Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

C106 pdf
C106 Series
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1 kW)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
Peak Forward OnState Voltage (Note 3)
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 W)
Peak Reverse Gate Voltage (IGR = 10 mA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 W)
Gate NonTrigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 W, TJ = 110°C)
Latching Current
(VAK = 12 V, IG = 20 mA, RGK = 1 kW)
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, RGK = 1 kW)
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = +110°C
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1 kW,
TJ = 110°C)
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. RGK is not included in measurement.
Symbol
IDRM, IRRM
VTM
IGT
VGRM
VGT
VGD
IL
IH
dv/dt
Min
0.4
0.5
0.2
Max
3.0
75
260
Typ
15
35
0.60
0.75
0.20
0.35
0.19
0.33
0.07
8.0
Unit
°C/W
°C/W
°C
Max Unit
10 mA
100 mA
2.2 V
mA
200
500
6.0 V
V
0.8
1.0
V
mA
5.0
7.0
mA
3.0
6.0
2.0
V/ms
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2


Part Number C106
Description Sensitive Gate Silicon Controlled Rectifiers
Maker ON Semiconductor
Total Page 6 Pages
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