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  ON Semiconductor Electronic Components Datasheet  

2N6340 Datasheet

POWER TRANSISTORS NPN SILICON

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2N6340 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6338/D
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6338
VCEO(sus) = 120 Vdc (Min) — 2N6339
VCEO(sus) = 140 Vdc (Min) — 2N6340
VCEO(sus) = 150 Vdc (Min) — 2N6341
High DC Current Gain —
hFE = 30 – 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎts = 1.0 µs (Max)
tf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎComplement to 2N6436–38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎContinuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCB
VCEO
VEB
IC
IB
PD
TJ, Tstg
2N6338
120
100
2N6339 2N6340
140 160
120 140
6.0
25
50
10
200
1.14
– 65 to + 200
2N6341
180
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
Symbol
θJC
Max
0.875
Unit
_C/W
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
175 200
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
2N6338
2N6339
2N6340
2N6341*
*Motorola Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
1



  ON Semiconductor Electronic Components Datasheet  

2N6340 Datasheet

POWER TRANSISTORS NPN SILICON

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2N6340 pdf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N6338 2N6339 2N6340 2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)
2N6338
2N6339
2N6340
2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 70 Vdc, IB = 0)
(VCE = 75 Vdc, IB = 0)
2N6338
2N6339
2N6340
2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
tr
ts
tf
Min
100
120
140
150
50
30
12
40
Max Unit
— Vdc
µAdc
50
50
50
50
10 µAdc
1.0 mAdc
10 µAdc
100 µAdc
120
Vdc
1.0
1.8
Vdc
1.8
2.5
1.8 Vdc
— MHz
300 pF
0.3 µs
1.0 µs
0.25 µs
* Indicates JEDEC Registered Data.
v v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| ftest.
+ 11 V
0
10 µs
– 9.0 V
vtr, tf 10 ns
DUTY CYCLE = 1.0%
RB
10 OHMS
VCC
+ 80 V
RC
8.0 OHMS
SCOPE
1N4933
– 5.0 V
1000
700
500
300
200
100
70
50
30
20
td @ VBE(off) = 6.0 V
tr
VCC = 80 V
IC/IB = 10
TJ = 25°C
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
Figure 2. Switching Time Test Circuit
10
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
20 30
2 Motorola Bipolar Power Transistor Device Data



  ON Semiconductor Electronic Components Datasheet  

2N6340 Datasheet

POWER TRANSISTORS NPN SILICON

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2N6340 pdf
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.05
0.07 0.02
0.05
0.03 0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
2N6338 2N6339 2N6340 2N6341
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
θJC = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.2 0.3 0.5 1.0
2.0 3.0 5.0
t, TIME (ms)
10
Figure 4. Thermal Response
20 30 50 100 200 300 500 1000
100
50
20 200 µs
10 dc 1.0 ms
5.0 5.0 ms
2.0 TJ = 200°C
1.0 BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C
0.2 (SINGLE PULSE)
0.1 SECOND BREAKDOWN LIMITED
0.05
0.02
CURVES APPLY BELOW
RATED VCEO
2N6338
2N6339
2N6340
0.01 2N6341
2.0 3.0 5.0 7.0 10
20 30 50 70
100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
5.0
3.0 ts
2.0
1.0
0.7
0.5
0.3
0.2 tf
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.1
0.07
0.05
0.3
0.5 0.7 1.0
2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
20 30
5000
3000
2000
Cib TJ = 25°C
1000
700
500
300
200 Cob
100
70
50
0.1
0.2 0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3




Part Number 2N6340
Description POWER TRANSISTORS NPN SILICON
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