| Description | 2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Bui... |
| Features |
• High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6286 VCE... |
| Datasheet |
 2N6286 Datasheet - 132.23KB |
