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  ON Semiconductor Electronic Components Datasheet  

2N6056 Datasheet

NPN Darlington Silicon Power Transistor

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2N6056 pdf
ON Semiconductort
NPN Darlington Silicon Power
Transistor
. . . designed for general–purpose amplifier and low frequency
switching applications.
High DC Current Gain —
hFE = 3000 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min)
www.DataSheet4U.Lcoomw Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRange
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Max
80
80
5.0
8.0
16
120
100
0.571
–65 to +200
Symbol
RθJC
Max
1.75
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
100
2N6056
ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
CASE 1–07
TO–204AA
(TO–3)
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
2N6056/D



  ON Semiconductor Electronic Components Datasheet  

2N6056 Datasheet

NPN Darlington Silicon Power Transistor

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2N6056 pdf
2N6056
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎwww.DataSheet4U.com
DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =8.0Adc,IB =80mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =8.0Adc,IB =80mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common Emitter Small–Signal Short Circuit Current Transfer Ratio
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Symbol
Min
VCEO(sus)
ICEO
ICEX
IEBO
80
Max Unit
Vdc
mAdc
0.5
mAdc
0.5
5.0
2.0 mAdc
hFE
VCE(sat)
VBE(sat)
VBE(on)
750 18000
100 —
Vdc
— 2.0
— 3.0
— 4.0 Vdc
— 2.8 Vdc
|hfe| 4.0 — —
Cob — 200 pF
hfe 300 — —
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%
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2



  ON Semiconductor Electronic Components Datasheet  

2N6056 Datasheet

NPN Darlington Silicon Power Transistor

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2N6056 pdf
2N6056
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
-ā30 V
D1 MUST BE FAST RECOVERY TYPE, e.g.,
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ā12 V
0
51 D1
8.0 k 50
V1
approx
-ā8.0 V
25 µs
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ā4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode, polarities and input pulses.
www.DataSheet4U.com
Figure 2. Switching Times Test Circuit
5.0
3.0 ts
2.0
1.0 tf
0.7
0.5
0.3
0.2
VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
td @ VBE(off) = 0
tr
0.07
0.05
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03 0.01
0.02 SINGLE PULSE
0.01
0.1
0.2 0.3 0.5 0.7 1.0
RθJC(t) = r(t) RθJC
RθJC = 1.75°C/W Ċ 2N6056
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
2.0 3.0
5.0 7.0 10
20 30
t, TIME (ms)
Figure 4. Thermal Response
50 70 100
200 300 500 700 1000
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3




Part Number 2N6056
Description NPN Darlington Silicon Power Transistor
Maker ON Semiconductor
Total Page 8 Pages
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