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  ON Semiconductor Electronic Components Datasheet  

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc −
VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6040 VCEO 60 Vdc
2N6043
2N6042
2N6045
100
Collector−Base Voltage
2N6040
2N6043
2N6042
2N6045
VCB
60 Vdc
100
Emitter−Base Voltage
Collector Current
Continuous
Peak
VEB
IC
5.0 Vdc
8.0 Adc
16
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 120 mAdc
PD 75 W
0.60 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
Publication Order Number:
2N6040/D



  ON Semiconductor Electronic Components Datasheet  

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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2N6043 pdf
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
Symbol
qJC
qJA
Max Unit
1.67 °C/W
57 °C/W
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
2N6040, 2N6043
60
2N6042, 2N6045
100 −
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
ICEO
mA
− 20
− 20
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
ICEX
mA
− 20
− 20
200
200
200
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N6040, 2N6043
2N6042, 2N6045
ICBO
mA
− 20
20
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
IEBO
− 2.0 mAdc
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
2N6040, 2N6043,
1000 20.000
2N6042, 2N6045
1000 20,000
All Types
100 −
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 80 Adc)
2N6040, 2N6043,
2N6042, 2N6045
All Types
VCE(sat)
Vdc
− 2.0
− 2.0
− 4.0
Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
VBE(on)
− 4.5 Vdc
− 2.8 Vdc
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6040/2N6042
2N6043/2N6045
|hfe|
Cob
4.0 −
− 300 pF
− 200
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
300 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
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  ON Semiconductor Electronic Components Datasheet  

2N6043 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
- 30 V
 1N5825 USED ABOVE IB 100 mA
 MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51 D1
8.0 k  120
V1
approx
-12 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
Figure 2. Switching Times Equivalent Circuit
5.0
3.0 ts
2.0
1.0 tf
0.7
0.5
0.3
0.2
VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.07 PNP
0.05 NPN
0.1 0.2 0.3
td @ VBE(off) = 0 V
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
tr
5.0 7.0 10
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
qJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10 20 30
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
50
100 200 300 500 1000
http://onsemi.com
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Part Number 2N6043
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
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