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  ON Semiconductor Electronic Components Datasheet  

2N6039G Datasheet

Plastic Darlington Complementary Silicon Power Transistors

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2N6039G pdf
2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G, 2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCEO
Vdc
40
60
80
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCBO
Vdc
40
60
80
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
ICM
IB
PD
5.0 Vdc
4.0 Adc
8.0 Apk
100 mAdc
40 W
320 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
3.12
83.3
Unit
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
http://onsemi.com
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
NPN
COLLECTOR 2, 4
PNP
COLLECTOR 2, 4
BASE
3
BASE
3
EMITTER 1
2N6038
2N6039
EMITTER 1
2N6034
2N6035
2N6036
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
2N6035/D



  ON Semiconductor Electronic Components Datasheet  

2N6039G Datasheet

Plastic Darlington Complementary Silicon Power Transistors

No Preview Available !

2N6039G pdf
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCEO(sus)
40
60
80
Vdc
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N6034G
(VCE = 60 Vdc, IB = 0)
2N6035G, 2N6038G
(VCE = 80 Vdc, IB = 0)
2N6036G, 2N6039G
ICEO
mA
− 100
− 100
− 100
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
2N6034G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6035G, 2N6038G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6036G, 2N6039G
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6034G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6035G, 2N6038G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6036G, 2N6039G
ICEX
mA
− 100
− 100
− 100
− 500
− 500
− 500
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N6034G
(VCB = 60 Vdc, IE = 0)
2N6035G, 2N6038G
(VCB = 80 Vdc, IE = 0)
2N6036G, 2N6039G
ICBO
mAdc
0.5
0.5
0.5
Emitter−Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
IEBO
mAdc
2.0
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
hFE
500
750 15,000
100 −
VCE(sat)
Vdc
2.0
3.0
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
VBE(on)
Vdc
4.0
Vdc
2.8
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe| 25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6034G, 2N6035G, 2N6036G
2N6038G, 2N6039G
Cob pF
− 200
− 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
http://onsemi.com
2



  ON Semiconductor Electronic Components Datasheet  

2N6039G Datasheet

Plastic Darlington Complementary Silicon Power Transistors

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2N6039G pdf
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
- 30 V
D1 MUST BE FAST RECOVERY TYPE, eg:
 1N5825 USED ABOVE IB 100 mA
 MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51 D1
8.0 k 60
V1
approx
-12 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 1. Switching Times Test Circuit
4.0
ts
VCC = 30 V IB1 = IB2
IC/IB = 250 TJ = 25°C
2.0
tf
1.0
0.8
0.6 tr
0.4
0.2
0.04 0.06
td @ VBE(off) = 0
PNP
NPN
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 2. Switching Times
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
P(pk)
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
Figure 3. Thermal Response
20 30 50
100 200 300 500 1000
http://onsemi.com
3




Part Number 2N6039G
Description Plastic Darlington Complementary Silicon Power Transistors
Maker ON Semiconductor
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