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  ON Semiconductor Electronic Components Datasheet  

2N6027 Datasheet

Programmable Unijunction Transistor

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2N6027 pdf
2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as RBB, h, IV, and IP by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,
pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Supplied
in an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automatic
insertion equipment.
Features
Programmable − RBB, h, IV and IP
Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (RG = 10 kW)
Pb−Free Packages are Available*
http://onsemi.com
PUTs
40 VOLTS, 300 mW
G
A
K
1
2
3
TO−92 (TO−226AA)
CASE 029
STYLE 16
MARKING DIAGRAM
2N
602x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev.6
1
2N602x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Anode
2 Gate
3 Cathode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6027/D



  ON Semiconductor Electronic Components Datasheet  

2N6027 Datasheet

Programmable Unijunction Transistor

No Preview Available !

2N6027 pdf
2N6027, 2N6028
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Power Dissipation*
Derate Above 25°C
DC Forward Anode Current*
Derate Above 25°C
PF
1/qJA
IT
300 mW
4.0 mW/°C
150 mA
2.67 mA/°C
DC Gate Current*
Repetitive Peak Forward Current
100 ms Pulse Width, 1% Duty Cycle
20 ms Pulse Width, 1% Duty Cycle*
IG
ITRM
"50
1.0
2.0
mA
A
Non−Repetitive Peak Forward Current
10 ms Pulse Width
ITSM
5.0 A
Gate to Cathode Forward Voltage*
Gate to Cathode Reverse Voltage*
Gate to Anode Reverse Voltage*
Anode to Cathode Voltage* (Note 1)
Capacitive Discharge Energy (Note 2)
VGKF
VGKR
VGAR
VAK
E
40
*5.0
40
±40
250
V
V
V
V
mJ
Power Dissipation (Note 3)
PD 300 mW
Operating Temperature
TOPR
−50 to +100
°C
Junction Temperature
TJ
−50 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 W
Anode negative, RGA = open
2. E = 0.5  CV2 capacitor discharge energy limiting resistor and repetition.
3. Derate current and power above 25°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes
(t1/16from case, 10 seconds maximum)
Symbol
RqJC
RqJA
TL
Max Unit
75 °C/W
200 °C/W
260 °C
http://onsemi.com
2



  ON Semiconductor Electronic Components Datasheet  

2N6027 Datasheet

Programmable Unijunction Transistor

No Preview Available !

2N6027 pdf
2N6027, 2N6028
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Fig. No.
Peak Current*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 kW)
2N6027
2N6028
2N6027
2N6028
2,9,11
Offset Voltage*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 kW)
Valley Current*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 k W)
(VS = 10 Vdc, RG = 200 W)
2N6027
2N6028
(Both Types)
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
1
1,4,5
Gate to Anode Leakage Current*
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted)
Forward Voltage*
(IF = 50 mA Peak) (Note 4)
Peak Output Voltage*
(VG = 20 Vdc, CC = 0.2 mF)
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 mF)
*Indicates JEDEC Registered Data
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
1,6
3,7
3
Symbol
IP
VT
IV
IGAO
IGKS
VF
Vo
tr
Min Typ Max Unit
mA
− 1.25 2.0
− 0.08 0.15
− 4.0 5.0
− 0.70 1.0
0.2 0.70 1.6
0.2 0.50 0.6
0.2 0.35 0.6
V
− 18 50
− 18 25
70 150
25 150
1.5 −
1.0 −
mA
mA
nAdc
− 1.0 10
− 3.0 −
− 5.0 50 nAdc
− 0.8 1.5
V
6.0 11
V
− 40 80 ns
+VB IA
IA A
R2
G
− VS =
R1
R1 + R2
VB
+
VAK R1
VAK
K
RG =
R1 R2
R1 + R2
RG
VS
1A − Programmable Unijunction
with Program" Resistors
R1 and R2
1B − Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
VA
VS −VP
VT = VP − VS
VF
VV
IGAO
IP
IV
IF
IC − Electrical Characteristics
IA
Figure 1. Electrical Characterization
Adjust
for
Turn−on
Threshold
VB
Scope
100 k
1.0%
IP (SENSE)
100 mV = 1.0 nA
+
2N5270
R
0.01 mF
RG = R/2
VS = VB/2
(See Figure 1)
Put
20 Under
Test
R
Figure 2. Peak Current (IP) Test Circuit
510 k
CC
+VB
+V
16 k Vo
6.0 V
vo
20 W
27 k
0.6 V
tf
Figure 3. Vo and tr Test Circuit
http://onsemi.com
3
t




Part Number 2N6027
Description Programmable Unijunction Transistor
Maker ON Semiconductor
Total Page 6 Pages
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