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  ON Semiconductor Electronic Components Datasheet  

2N5555 Datasheet

JFET Switching

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2N5555 pdf
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ON Semiconductort
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
2N5555
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IGF
PD
TJ
Tstg
Value
25
25
25
10
350
2.8
–65 to +150
–65 to +150
2 SOURCE
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Symbol
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
Min Max Unit
25 — Vdc
— 1.0 nAdc
— 10 nAdc
— 2.0 µAdc
15 — mAdc
— 1.0 Vdc
— 1.5 Vdc
— 150 Ohms
— 150 Ohms
— 5.0 pF
— 1.2 pF
— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
2N5555/D



  ON Semiconductor Electronic Components Datasheet  

2N5555 Datasheet

JFET Switching

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2N5555 pdf
2N5555
PULSE
GENERATOR
(50 OHMS)
50 OHM COAXIAL CABLE
1.0 k
1.0 k
50
INPUT PULSE
ąRISE TIME < 1.0 ns
ąFALL TIME < 1.0 ns
ąNOMINAL VALUE OF ON" PULSE WIDTH = 400 ns
ąDUTY CYCLE 1.0%
ąGENERATOR SOURCE IMPEDANCE = 50 OHMS
VDD
50 OHM
COAXIAL
CABLE
10 k
PULSE WIDTH
TEKTRONIX
567
SAMPLING
SCOPE
50%
INPUT 10%
90%
INPUT PULSE
RISE TIME
Rin =
50 OHMS
OUTPUT
td(on)
10%
90%
td(off)
50%
10%
VGS(on)
VGS(off)
INPUT PULSE
FALL TIME
10%
90% 90%
tr tf
Figure 1. Switching Times Test Circuit
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
bis @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Input Admittance (yis)
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
10
20 30
grs @ IDSS, 0.25 IDSS
50 70 100 200 300 500 700 100
f, FREQUENCY (MHz)
Figure 3. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
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2
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 100
f, FREQUENCY (MHz)
Figure 5. Output Admittance (yos)



  ON Semiconductor Electronic Components Datasheet  

2N5555 Datasheet

JFET Switching

No Preview Available !

2N5555 pdf
2N5555
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20° 10°
0° 350° 340°
330°
30°
20° 10°
0° 350° 340°
330°
40°
1.0 100 ID = 0.25 IDSS 320°
40°
0.4
320°
100 200
200 300
0.9 0.3
50°
400 310°
50° ID = IDSS, 0.25 IDSS
310°
300 900
60°
0.8
ID = IDSS 400
500
300°
600
60°
800
600 700
0.2
300°
70°
0.7 500 290° 70°
500 0.1
290°
600 700
400
80°
0.6
700 800 280°
80°
300 0.0
280°
90°
800
900
900
270° 90°
200
100
270°
100° 260° 100° 260°
110° 250° 110° 250°
120° 240° 120° 240°
130° 230° 130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 6. S11s
30°
20° 10°
0° 350° 340°
330°
40° 320°
0.6
50°
0.5
60°
70° 900
800
900
0.4
80° 700 800
0.3
90° 600 700 ID = 0.25 IDSS
600
100° 500
500
0.3
400 100
110° 400
300 200 0.4
300
120°
ID = IDSS
200 100 0.5
130°
0.6
310°
300°
290°
280°
270°
260°
250°
240°
230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 7. S12s
30°
20° 10°
0° 350° 340°
330°
40°
100
1.0
200
100 200
300
ID
400
500
=
0.25
IDSS
320°
300
400
0.9 500
600
700
50°
ID = IDSS
0.8
600 800
700
800 900
900
310°
60° 300°
70° 0.7 290°
80° 280°
0.6
90° 270°
100° 260°
110° 250°
120° 240°
130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 8. S21s
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 9. S22s
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3




Part Number 2N5555
Description JFET Switching
Maker ON Semiconductor
Total Page 8 Pages
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