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  ON Semiconductor Electronic Components Datasheet  

2N5401G Datasheet

Amplifier Transistors

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2N5401G pdf
2N5401
Amplifier Transistors
PNP Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
150 Vdc
160 Vdc
5.0 Vdc
600 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5401
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 4
1
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
2N5401/D


  ON Semiconductor Electronic Components Datasheet  

2N5401G Datasheet

Amplifier Transistors

No Preview Available !

2N5401G pdf
2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
150
160
5.0
hFE
VCE(sat)
VBE(sat)
50
60
50
fT
Cobo
hfe
NF
100
40
Max Unit
Vdc
Vdc
Vdc
50 nAdc
50 mAdc
nAdc
50
240
Vdc
0.2
0.5
Vdc
1.0
1.0
MHz
300
pF
6.0
200
dB
8.0
ORDERING INFORMATION
Device
Package
Shipping
2N5401G
TO92
(PbFree)
5000 Unit / Bulk
2N5401RLRAG
TO92
(PbFree)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number 2N5401G
Description Amplifier Transistors
Maker ON Semiconductor
Total Page 5 Pages
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