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  ON Semiconductor Electronic Components Datasheet  

2N5303 Datasheet

POWER TRANSISTORS NPN SILICON

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2N5303 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5301/D
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
Excellent Safe Operating Area —
200 Watt dc Power Rating to 30 Vdc (2N5303)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎComplements to PNP 2N4398, 2N4399 and 2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol 2N5301 2N5302 2N5303
VCEO
40
60
80
VCB
40
60
80
IC 30 30 20
IB 7.5
PD 200
1.14
TJ, Tstg
– 65 to + 200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Case to Ambient
Symbol
θJC
θCA
Max
0.875
34
Unit
_C/W
_C/W
* Indicates JEDEC Registered Data.
TA TC
8.0 200
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 – 60 – 80 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
6.0 150
TC
4.0 100
2.0 50
TA
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1



  ON Semiconductor Electronic Components Datasheet  

2N5303 Datasheet

POWER TRANSISTORS NPN SILICON

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2N5303 pdf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N5301 2N5302 2N5303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB = 0)
2N5301
2N5302
2N5303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
DC Current Gain (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 15 Adc, VCE = 2.0 Vdc)
*(IC = 20 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 30 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Collector–Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)
(IC = 20 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 4.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, IB = 6.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Base Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)
(IC = 20 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 4.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Base–Emitter On Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 15 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, VCE = 4.0 Vdc)
2N5301
2N5302
2N5303
2N5301
2N5302
2N5303
2N5301
2N5302
2N5303
2N5301
2N5302
2N5303
ALL TYPES
2N5303
2N5301, 2N5302
2N5303
2N5301, 2N5302
2N5301, 2N5302
2N5303
2N5303
2N5301, 2N5302
2N5303
2N5301, 2N5302
ALL TYPES
2N5301, 2N5302
2N5303
2N5301, 2N5302
2N5303
2N5303
2N5301, 2N5302
2N5303
2N5301, 2N5302
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
v vNote 1: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
VCEO(sus)
ICEO
ICEX
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
hfe
tr
ts
tf
Min
40
60
80
40
15
15
5.0
5.0
2.0
40
Max Unit
Vdc
mAdc
5.0
5.0
5.0
mAdc
1.0
1.0
1.0
mAdc
10
10
10
mAdc
1.0
1.0
1.0
5.0 mAdc
60
60
Vdc
0.75
1.0
1.5
2.0
2.0
3.0
Vdc
1.7
1.8
2.0
2.5
2.5
Vdc
1.5
1.7
25
3.0
— MHz
——
1.0 µs
2.0 µs
1.0 µs
2 Motorola Bipolar Power Transistor Device Data



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2N5303 Datasheet

POWER TRANSISTORS NPN SILICON

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2N5303 pdf
2N5301 2N5302 2N5303
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+11 V
INPUT PULSE
tr 20 ns
PW = 10 to 100 µs
DUTY CYCLE = 2.0%
– 2.0 V
10
VCC
+ 30 V
3.0
TO
SCOPE
tr 20 ns
+11 V
INPUT PULSE
tr 20 ns
PW = 10 to 100 µs
DUTY CYCLE = 2.0%
0
– 9.0 V
10
D
VCC
+ 30 V
3.0
TO
SCOPE
tr 20 ns
Figure 2. Turn–On time
VBB = 7.0 V
Figure 3. Turn–Off time
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.01
0.03
0.02 SINGLE PULSE
0.01
0.02 0.03 0.05 0.1 0.2 0.3 0.5
θJC(t) = r(t) θJC
P(pk)
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0 10
t, TIME (ms)
20 30
Figure 4. Thermal Response
50
100 200 300 500 1000 2000
100
50 100 µs
20
2N5303
10
2N5301, 5302
5.0 ms
5.0
TJ = 200°C
1.0 ms dc
2.0 Secondary Breakdown Limited
1.0
Bonding Wire Limited
Thermal Limitations
TC = 25°C
0.5 Pulse Duty Cycle 10%
0.2
0.1
1.0
2.0 3.0 5.0
2N5301
2N5302
2N5303
10 20
30
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active–Region Safe Operating Area
3000
2000
TJ = 25°C
1000
Cib
500
Cob
300
200
100
0.5
1.0 2.0 3.0 5.0 7.0 10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
50
Motorola Bipolar Power Transistor Device Data
3




Part Number 2N5303
Description POWER TRANSISTORS NPN SILICON
Maker ON Semiconductor
Total Page 6 Pages
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