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  ON Semiconductor Electronic Components Datasheet  

2N5210 Datasheet

Amplifier Transistors(NPN Silicon)

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2N5210 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
Order this document
by 2N5209/D
2N5209
2N5210
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50 Vdc
50 Vdc
4.0 Vdc
50 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
Max Unit
— Vdc
— Vdc
50 nAdc
50 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



  ON Semiconductor Electronic Components Datasheet  

2N5210 Datasheet

Amplifier Transistors(NPN Silicon)

No Preview Available !

2N5210 pdf
2N5209 2N5210
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5209
2N5210
hFE —
100 300
200 600
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 k,
f = 1.0 kHz)
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
150 —
250 —
150 —
250 —
VCE(sat)
0.7 Vdc
VBE(on)
0.85 Vdc
fT 30 — MHz
Ccb — 4.0 pF
hfe —
150 600
250 900
NF dB
— 3.0
— 2.0
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 k,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5209
2N5210
— 4.0
— 3.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



  ON Semiconductor Electronic Components Datasheet  

2N5210 Datasheet

Amplifier Transistors(NPN Silicon)

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2N5210 pdf
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
30
BANDWIDTH = 1.0 Hz
20
IC = 10 mA
RS 0
NOISE VOLTAGE
30
20
BANDWIDTH = 1.0 Hz
RS 0
2N5209 2N5210
3.0 mA
10
1.0 mA
7.0
5.0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
3.0
10 20
300 µA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
3.0
0.01 0.02
100 kHz
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 3. Effects of Collector Current
10
10
7.0 BANDWIDTH = 1.0 Hz
5.0
IC = 10 mA
3.0
2.0 3.0 mA
1.0 1.0 mA
0.7
0.5
300 µA
0.3 100 µA
0.2
RS 0
0.1
10 µA
30 µA
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
Figure 4. Noise Current
20
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
IC = 1.0 mA
8.0 500 µA
100 µA
4.0 10 µA
0
10 20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200 BANDWIDTH = 1.0 Hz
IC = 10 mA
100 100 µA
70 3.0 mA
50
1.0 mA
30 300 µA
20
30 µA
20
16
12
8.0
IC = 10 mA
3.0 mA
1.0 mA
300 µA
10
7.0
5.0
3.0
10 20
10 µA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
100 µA
4.0 30 µA
10 µA
BANDWIDTH = 1.0 Hz
0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3




Part Number 2N5210
Description Amplifier Transistors(NPN Silicon)
Maker ON Semiconductor
Total Page 6 Pages
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