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  ON Semiconductor Electronic Components Datasheet  

2N5195G Datasheet

Silicon PNP Power Transistors

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2N5195G pdf
2N5194G, 2N5195G
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits.
Features
Complement to NPN 2N5191, 2N5192
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5194G
2N5195G
VCEO
60
80
Vdc
Collector−Base Voltage
2N5194G
2N5195G
VCB Vdc
60
80
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 4.0 Adc
IB 1.0 Adc
PD
40 W
320 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to +150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.12
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
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4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 − 80 VOLTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
2
N519xG
Y
WW
2N519x
G
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N5194G
TO−225
(Pb−Free)
500 Units / Bulk
2N5195G
TO−225
(Pb−Free)
500 Units / Bulk
Publication Order Number:
2N5194/D



  ON Semiconductor Electronic Components Datasheet  

2N5195G Datasheet

Silicon PNP Power Transistors

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2N5195G pdf
2N5194G, 2N5195G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N5194G
2N5195G
VCEO(sus)
60
80
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N5194G
(VCE = 80 Vdc, IB = 0)
2N5195G
ICEO
mAdc
1.0
1.0
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5194G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5195G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5194G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5195G
ICEX
mAdc
− −0.1
− 0.1
− 2.0
− 2.0
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5194G
(VCB = 80 Vdc, IE = 0)
2N5195G
ICBO
mAdc
0.1
0.1
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
1.0
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5194G
2N5195G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5194G
2N5195G
hFE
25 100
20 80
10 −
7.0 −
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Vdc
0.6
1.4
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
Vdc
1.2
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT MHz
2.0 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width 300Ăms, Duty Cycle Ă2.0%.
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  ON Semiconductor Electronic Components Datasheet  

2N5195G Datasheet

Silicon PNP Power Transistors

No Preview Available !

2N5195G pdf
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.004
TJ = 150°C
0.007 0.01
25°C
0.02
2N5194G, 2N5195G
- 55°C
0.03 0.05 0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
0.5
1.0
VCE = 2.0 V
VCE = 10 V
2.0 3.0 4.0
2.0
1.6
1.2 IC = 10 mA
0.8
0.4
100 mA
TJ = 25°C
1.0 A 3.0 A
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
50 70 100
200 300 500
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
2.0 3.0 4.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB hFE @ VCE
TJ = - 65°C to +150°C
+ 1.5
+ 1.0
+ 0.5 *qVC for VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB for VBE
- 2.0
- 2.5
0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
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Part Number 2N5195G
Description Silicon PNP Power Transistors
Maker ON Semiconductor
Total Page 6 Pages
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