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  ON Semiconductor Electronic Components Datasheet  

2N5060 Datasheet

(2N5060 - 2N5064) Sensitive Gate Silicon Controlled Rectifiers

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2N5060 pdf
2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
Sensitive Gate Trigger Current − 200 mA Maximum
Low Reverse and Forward Blocking Current − 50 mA Maximum,
TC = 110°C
Low Holding Current − 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code
Pb−Free Packages are Available*
http://onsemi.com
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 − 200 V
G
AK
1
23
TO−92
CASE 29
STYLE 10
MARKING
DIAGRAM
2N
50xx
YWW
50xx
Y
WW
Specific Device Code
= Year
= Work Week
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 7
1
Publication Order Number:
2N5060/D


  ON Semiconductor Electronic Components Datasheet  

2N5060 Datasheet

(2N5060 - 2N5064) Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

2N5060 pdf
2N5060 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064
VDRM,
VRRM
30
60
100
200
V
On-State Current RMS (180° Conduction Angles; TC = 80°C)
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
*Peak Non-repetitive Surge Current,
TA = 25°C
(1/2 cycle, Sine Wave, 60 Hz)
IT(RMS)
IT(AV)
ITSM
0.8
0.51
0.255
10
A
A
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t 0.4 A2s
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
IT(AV)
0.51
0.255
A
*Forward Peak Gate Power (Pulse Width v 1.0 msec; TA = 25°C)
PGM
0.1 W
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms)
PG(AV)
0.01
W
*Forward Peak Gate Current (Pulse Width v 1.0 msec; TA = 25°C)
IGM 1.0 A
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; TA = 25°C)
VRGM 5.0 V
*Operating Junction Temperature Range
TJ
−40 to +110
°C
*Storage Temperature Range
Tstg
−40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
*Thermal Resistance, Junction−to−Case (Note 2)
RqJC
75 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
*Lead Solder Temperature (Lead Length q 1/16from case, 10 s Max)
+230*
°C
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
http://onsemi.com
2


Part Number 2N5060
Description (2N5060 - 2N5064) Sensitive Gate Silicon Controlled Rectifiers
Maker ON Semiconductor
Total Page 8 Pages
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