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  ON Semiconductor Electronic Components Datasheet  

2N4921 Datasheet

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

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2N4921 pdf
ON Semiconductor)
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating & Storage Junction
Temperature Range
Symbol 2N4921 2N4922 2N4923
VCEO
40
60
80
VCB
40
60
80
VEB
5.0
IC 1.0
3.0
IB 1.0
PD 30
0.24
TJ, Tstg
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Max Unit
4.16 _C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
2N4921
thru
2N4923 *
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
321
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–09
TO–225AA TYPE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4921/D



  ON Semiconductor Electronic Components Datasheet  

2N4921 Datasheet

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

No Preview Available !

2N4921 pdf
2N4921 thru 2N4923
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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  ON Semiconductor Electronic Components Datasheet  

2N4921 Datasheet

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

No Preview Available !

2N4921 pdf
2N4921 thru 2N4923
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
2N4921
2N4922
2N4923
VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
2N4921
2N4922
2N4923
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =1.0Adc,IB =0.1Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage (3)
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSMALL–SIGNAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(3) Pulse Test: PW 300 µs, Duty Cycle 2.0%.
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
hfe
Min
40
60
80
40
30
10
3.0
25
Max Unit
Vdc
mAdc
0.5
0.5
0.5
mAdc
0.1
0.5
0.1 mAdc
1.0 mAdc
150
0.6 Vdc
1.3 Vdc
1.3 Vdc
— MHz
100 pF
——
*Indicates JEDEC Registered Data.
APPROX
+11 V
Vin
TURN-ON PULSE
t1
VBE(off)
VCC RC
Vin RB
CjdĂ<<ĂCeb
5.0
3.0
2.0
VCC = 30 V
IC/IB = 10, UNLESS NOTED
IC/IB = 20
TJ = 25°C
VCC = 60 V
TJ = 150°C
1.0
0.7
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
SCOPE
APPROX 9.0 V
0.5
-ā4.0 V
t1 15 ns
100 < t2 500 µs
VCC = 30 V
0.3 td
0.2
t3 15 ns
0.1
DUTY CYCLE 2.0% 0.07
RB and RC varied to 0.05
VCC = 30 V
VBE(off) = 0
obtain desired
10 20 30
tr
VCC = 60 V
VBE(off) = 2.0 V
50 70 100 200 300
500 700 1000
current levels
IC, COLLECTOR CURRENT (mA)
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn–On Time
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Part Number 2N4921
Description 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
Maker ON Semiconductor
Total Page 8 Pages
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