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  ON Semiconductor Electronic Components Datasheet  

2N4403 Datasheet

General Purpose Transistors(PNP Silicon)

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2N4403 pdf
2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
600 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
4403
AYWW G
G
2N4403 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
Publication Order Number:
2N4403/D



  ON Semiconductor Electronic Components Datasheet  

2N4403 Datasheet

General Purpose Transistors(PNP Silicon)

No Preview Available !

2N4403 pdf
2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
Base Cutoff Current
(IE = 0.1 mAdc, IC = 0)
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage (Note 1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Collector−Base Capacitance
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
40
40
5.0
30
60
100
100
20
0.75
200
1.5 k
0.1
60
1.0
Max Unit
− Vdc
− Vdc
− Vdc
0.1 mAdc
0.1 mAdc
−−
300
0.4 Vdc
0.75
0.95 Vdc
1.3
− MHz
8.5 pF
30 pF
15 k W
8.0 X 10−4
500 −
100 mmhos
15 ns
20 ns
225 ns
30 ns
ORDERING INFORMATION
Device
2N4403
Package
TO−92
Shipping
5000 Units / Bulk
2N4403G
TO−92
(Pb−Free)
5000 Units / Bulk
2N4403RLRA
TO−92
2000 / Tape & Reel
2N4403RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
2N4403RLRM
TO−92
2000 / Ammo Pack
2N4403RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
2N4403RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2



  ON Semiconductor Electronic Components Datasheet  

2N4403 Datasheet

General Purpose Transistors(PNP Silicon)

No Preview Available !

2N4403 pdf
+2 V
0
−16 V
2N4403
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 kW
10 to 100 ms,
DUTY CYCLE = 2%
−30 V
200 W
< 20 ns
CS* < 10 pF
+14 V
0
−16 V
Scope rise time < 4.0 ns
1.0 kW
1.0 to 100 ms,
DUTY CYCLE = 2%
+4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
−30 V
200 W
CS* < 10 pF
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
30
20
10
7.0
5.0
2.0
0.1
TRANSIENT CHARACTERISTICS
25°C 100°C
10
7.0
5.0
Ceb
3.0
2.0
VCC = 30 V
IC/IB = 10
Ccb
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30
1.0
0.7
0.5
0.3
0.2
0.1
10
QT
QA
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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3




Part Number 2N4403
Description General Purpose Transistors(PNP Silicon)
Maker ON Semiconductor
Total Page 7 Pages
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