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  ON Semiconductor Electronic Components Datasheet  

2N4402 Datasheet

General Purpose Transistors(PNP Silicon)

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2N4402 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4402/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2N4402
2N4403*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
40
5.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
40 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



  ON Semiconductor Electronic Components Datasheet  

2N4402 Datasheet

General Purpose Transistors(PNP Silicon)

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2N4402 pdf
2N4402 2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4403
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
Symbol
hFE
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
2N4402
2N4403
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Both
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4402
2N4403
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
30
30
60
50
100
50
100
20
0.75
150
200
750
1.5 k
0.1
30
60
1.0
Max Unit
150
300
Vdc
0.4
0.75
Vdc
0.95
1.3
8.5
30
7.5 k
15 k
8.0
250
500
100
MHz
pF
pF
ohms
X 10–4
µmhos
15 ns
20 ns
225 ns
30 ns
+2 V
0
– 16 V
2
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 k
10 to 100 µs,
DUTY CYCLE = 2%
– 30 V
200
< 20 ns
+14 V
CS* < 10 pF
0
–16 V
1.0 k
1.0 to 100 µs,
Scope rise time < 4.0 ns
DUTY CYCLE = 2% + 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
– 30 V
200
CS* < 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data



  ON Semiconductor Electronic Components Datasheet  

2N4402 Datasheet

General Purpose Transistors(PNP Silicon)

No Preview Available !

2N4402 pdf
2N4402 2N4403
TRANSIENT CHARACTERISTICS
25°C 100°C
30
20 Ceb
10
7.0
5.0
3.0
VCC = 30 V
IC/IB = 10
2.0
10
7.0
1.0
0.7
5.0
Ccb 0.5
QT
0.3 QA
0.2
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30
0.1
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100 100
70
IC/IB = 10
70
50 50
tr @ VCC = 30 V
30
tr @ VCC = 10 V
30
td @ VBE(off) = 2 V
20
td @ VBE(off) = 0
20
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20 30 50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
100
70
50
30
20
10
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts= ts – 1/8 tf
20 30 50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
500
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3




Part Number 2N4402
Description General Purpose Transistors(PNP Silicon)
Maker ON Semiconductor
Total Page 6 Pages
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