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  ON Semiconductor Electronic Components Datasheet  

2N4401 Datasheet

General Purpose Transistors(NPN Silicon)

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2N4401 pdf
2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
40
60
6.0
600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
4401
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
2N4401
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N4401/D



  ON Semiconductor Electronic Components Datasheet  

2N4401 Datasheet

General Purpose Transistors(NPN Silicon)

No Preview Available !

2N4401 pdf
2N4401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 1)
(IC = 1.0 mAdc, IB = 0)
(IC = 0.1 mAdc, IE = 0)
(IE = 0.1 mAdc, IC = 0)
(VCE = 35 Vdc, VEB = 0.4 Vdc)
(VCE = 35 Vdc, VEB = 0.4 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
40
60
6.0
− Vdc
− Vdc
− Vdc
0.1 mAdc
0.1 mAdc
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
20 −
40 −
80 −
100 300
40 −
Collector−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
− 0.4 Vdc
− 0.75
Base−Emitter Saturation Voltage
SMALL−SIGNAL CHARACTERISTICS
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75 0.95 Vdc
− 1.2
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
fT
Ccb
Ceb
hie
hre
hfe
hoe
250 − MHz
− 6.5 pF
− 30 pF
1.0 15 k W
0.1 8.0 X 10−4
40 500 −
1.0 30 mmhos
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
td − 15 ns
tr − 20 ns
ts − 225 ns
tf − 30 ns
ORDERING INFORMATION
Device
2N4401
Package
TO−92
Shipping
5000 Units / Bulk
2N4401G
TO−92
(Pb−Free)
5000 Units / Bulk
2N4401RLRA
TO−92
2000 / Tape & Reel
2N4401RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
2N4401RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
2N4401RLRP
TO−92
2000 / Ammo Pack
2N4401RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2



  ON Semiconductor Electronic Components Datasheet  

2N4401 Datasheet

General Purpose Transistors(NPN Silicon)

No Preview Available !

2N4401 pdf
+16 V
0
−2.0 V
2N4401
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE 2.0%
< 2.0 ns
1.0 kW
+30 V
200 W
CS* < 10 pF
+16 V
0
−14 V
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 kW
< 20 ns
+30 V
200 W
CS* < 10 pF
Figure 1. Turn−On Time
Scope rise time < 4.0 ns
−4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C 100°C
30 10
7.0
20
5.0
VCC = 30 V
IC/IB = 10
Cobo 3.0
2.0
10
QT
7.0
1.0
0.7
5.0 0.5
Ccb 0.3
3.0 0.2 QA
2.0
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30 50
0.1
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
70
50
30
20
10
7.0
5.0
10
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
100
70
50
30
20
10
7.0
5.0
10
tr
tf
VCC = 30 V
IC/IB = 10
20 30 50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Times
500
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3




Part Number 2N4401
Description General Purpose Transistors(NPN Silicon)
Maker ON Semiconductor
Total Page 7 Pages
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