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  ON Semiconductor Electronic Components Datasheet  

2N4398 Datasheet

PNP Silicon High-Power Transistors

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2N4398 pdf
ON Semiconductort
PNP Silicon High-Power
Transistors
. . . designed for use in power amplifier and switching circuits.
Low Collector–Emitter Saturation Voltage —
IC = 15 Adc, VCE(sat)
= 1.0 Vdc (Max) 2N4398,99
= 1.5 Vdc (Max) 2N5745
DC Current Gain Specified —
= 1.0 to 30 Adc
Complements to NPN 2N5301, 2N5302, 2N303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N4398 2N4399 2N5745 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C**
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
40 60 80 Vdc
40 60 80 Vdc
5.0 Vdc
30 30 20 Adc
50 50 50
7.5 Adc
15
5.0
28.6
200
1.15
–65 to +200
Watts
mW/_C
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
θJC
θJA
0.875
35
_C/W
_C/W
* Indicates JEDEC Registered Data.
** ON Semiconductor guarantees this data in addition to JEDEC Registered Data.
2N4398
2N4399
2N5745
20, 30 AMPERE
POWER TRANSISTORS
PNP SILICON
40–60–180 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N4398/D


  ON Semiconductor Electronic Components Datasheet  

2N4398 Datasheet

PNP Silicon High-Power Transistors

No Preview Available !

2N4398 pdf
2N4398 2N4399 2N5745
TA TC
10 200
9.0 180
8.0 160
7.0 140
6.0 120
5.0 100
4.0 80
TC
3.0 60
2.0 40
TA
1.0 20
00
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
Safe Area Curves are indicated by Figure 13. All limits are applicable and must be observed.
http://onsemi.com
2


Part Number 2N4398
Description PNP Silicon High-Power Transistors
Maker ON Semiconductor
Total Page 8 Pages
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