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  ON Semiconductor Electronic Components Datasheet  

2N4264 Datasheet

General Purpose Transistor(NPN Silicon)

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2N4264 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
Order this document
by 2N4264/D
2N4264
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
30
6.0
200
350
2.8
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
15 —
Vdc
30 —
Vdc
6.0 —
µAdc
— 0.1
— 10
nAdc
— 100
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1



  ON Semiconductor Electronic Components Datasheet  

2N4264 Datasheet

General Purpose Transistor(NPN Silicon)

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2N4264 pdf
2N4264
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C)
(IC = 30 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)(1)
(IC = 200 mAdc, VCE = 1.0 Vdc)(1)
hFE —
25 —
40 160
20 —
40 —
30 —
20 —
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
SMALL– SIGNAL CHARACTERISTICS
VCE(sat)
Vdc
0.22
0.35
VBE(sat)
Vdc
0.65 0.8
0.75 0.95
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 300 — MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo — 8.0 pF
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
Cobo — 4.0 pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn–On Time
(VCC = 10 Vdc, VEB(off) = 2.0 Vdc,
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
VCC = 10 Vdc, (IC = 10 mAdc, for ts)
(IC = 100 mA for tf)
(IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,
IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
td
tr
ts
tf
ton
— 8.0 ns
— 15 ns
— 20 ns
— 15 ns
— 25 ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
toff
— 35 ns
Storage Time
(VCC = 10 Vdc, IC = 10 mA,
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
ts — 20 ns
Total Control Charge
(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)
(Fig. 3, Test Condition A)
QT — 80 pC
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 1. Switching Time Equivalent Test Circuit
Test
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
mA V Ω Ω
pF
V VVV
A 10 3 3300 270 4
–1.5 10.55 –4.15 10.70
B 10 10 560 960 4
— — –4.65 6.55
C 100 10 560 96 12
–2.0 6.35 –4.65 6.55
V1
0
VEB(off)
ton
t1 V3
0
V2
< 2 ns
toff
t1
VCC
RC
RB
< 2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
CS
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



  ON Semiconductor Electronic Components Datasheet  

2N4264 Datasheet

General Purpose Transistor(NPN Silicon)

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2N4264 pdf
100
70
50
30
20
10
1.0
CURRENT GAIN CHARACTERISTICS
TJ = 125°C
25°C
–15°C
– 55°C
2N4264
2N4264
VCE = 1 V
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 2. Minimum Current Gain
50 70 100
200
+10 V
V
0
t1
270
3V
8 pF
<1 ns 9.2 k
PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2%
Figure 3. QT Test Circuit
CS < 4 pF
C COPT
C < COPT
C=0
TIME
Figure 4. Turn–Off Waveform
NOTE 1
When a transistor is held in a conductive state by a base current, IB,
a charge, QS, is developed or “stored” in the transistor. QS may be
written: QS = Q1 + QV + QX.
Q1 is the charge required to develop the required collector current.
This charge is primarily a function of alpha cutoff frequency. QV is the
charge required to charge the collector–base feedback capacity. QX is
excess charge resulting from overdrive, i.e., operation in saturation.
The charge required to turn a transistor “on” to the edge of saturation
is the sum of Q1 and QV which is defined as the active region charge,
QA. QA = IB1tr when the transistor is driven by a constant current step
(IB1)
and
IB1
<
<
IC
hFE
.
If IB were suddenly removed, the transistor would continue to
conduct until QS is removed from the active regions through an
external path or through internal recombination. Since the internal
recombination time is long compared to the ultimate capability of a
transistor, a charge, QT, of opposite polarity, equal in magnitude, can
be stored on an external capacitor, C, to neutralize the internal charge
and considerably reduce the turn–off time of the transistor. Figure 3
shows the test circuit and Figure 4 the turn–off waveform. Given QT
from Figure 13, the external C for worst–case turn–off in any circuit is:
C = QT/V, where V is defined in Figure 3.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3




Part Number 2N4264
Description General Purpose Transistor(NPN Silicon)
Maker ON Semiconductor
Total Page 6 Pages
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