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  ON Semiconductor Electronic Components Datasheet  

2N3440 Datasheet

Low Power Transistor

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2N3440 pdf
2N3440
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Low Power Transistor
NPN Silicon
Features
MILPRF19500/368 Qualified
Available as JAN, JANTX, and JANTXV
Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
250
Collector Base Voltage
Emitter Base Voltage
VCBO
VEBO
300
7.0
Collector Current Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
PT 800
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
PT
TJ, Tstg
5.0
65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
175 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO39
CASE 205AB
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
2N3440
TO39
Bulk
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2011
January, 2011 Rev. P1
1
Publication Order Number:
2N3440/D



  ON Semiconductor Electronic Components Datasheet  

2N3440 Datasheet

Low Power Transistor

No Preview Available !

2N3440 pdf
2N3440
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
EmitterBase Cutoff Current
(VEB = 7.0 Vdc)
CollectorEmitter Cutoff Current
(VCE = 200 Vdc)
CollectorEmitter Cutoff Current
(VCE = 300 Vdc, VBE = 1.5 Vdc)
CollectorBase Cutoff Current
(VCE = 250 Vdc)
(VCE = 300 Vdc)
(VCE = 250 Vdc, TA = 150°C)
DC Current Gain (Note 1)
(IC = 0.2 mAdc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc, TA = 55°C)
Collector Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
Base Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz)
SmallSignal ShortCircuit Forward Current Transfer Ratio
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
SWITCHING CHARACTERISTICS
Turnon Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = 2.0 mAdc)
Turnoff Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = IB2 = 2.0 mAdc)
1. Pulse Test: See section 4 of MILSTD750.
2. See Figure 14 in MILPRF19500/368.
Symbol
IEBO
ICEO
ICEX
ICBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
hfe
|hfe|
ton
toff
Min Max
10
2.0
5.0
2.0
5.0
6.0
10
30
40 160
15
0.5
1.3
10
75
25
3.0 15
1.0
10
Unit
mAdc
mAdc
mAdc
mAdc
Vdc
Vdc
pF
pF
ms
ms
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  ON Semiconductor Electronic Components Datasheet  

2N3440 Datasheet

Low Power Transistor

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2N3440 pdf
2N3440
PACKAGE DIMENSIONS
DETAIL X
U
RF
NOTE 5
B
A
B
PC
L
A
SEATING
PLANE
K
3X D NOTES 4 & 6
0.007 (0.18MM) A B S C M
TO39 3Lead
CASE 205AB01
ISSUE O
U
E
T
NOTE 7
DETAIL X
H
M
C
N
J
2
13
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.89 9.40 0.350 0.370
B 8.00 8.51 0.315 0.335
C 6.10 6.60 0.240 0.260
D 0.41 0.48 0.016 0.019
E 0.23 3.18 0.009 0.125
F 0.41 0.48 0.016 0.019
H 0.71 0.86 0.028 0.034
J 0.73 1.02 0.029 0.040
K 12.70 14.73 0.500 0.580
L 6.35 --- 0.250 ---
M 45_BSC
N 5.08 BSC
45_BSC
0.200 BSC
P --- 1.27 --- 0.050
R 1.37 BSC
0.054 BSC
T --- 0.76 --- 0.030
U 2.54 --- 0.100 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N3440/D




Part Number 2N3440
Description Low Power Transistor
Maker ON Semiconductor
Total Page 3 Pages
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