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  ON Semiconductor Electronic Components Datasheet  

2N3055A Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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2N3055A pdf
2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
Current−Gain − Bandwidth−Product @ IC = 1.0 Adc
fT = 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
2N3055A
Symbol
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
Value
60
120
100
200
100
200
7.0
15
7.0
115
0.65
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
TJ, Tstg
180
1.03
−65 to +200
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Max Unit
Thermal Resistance, Junction−to−Case
RqJC 1.52 0.98 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N3055A/D


  ON Semiconductor Electronic Components Datasheet  

2N3055A Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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2N3055A pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN (Note 3)
2N3055A
MJ15015, MJ15016
VCEO(sus)
60
120
Vdc
2N3055A
MJ15015, MJ15016
ICEO
mAdc
− 0.7
− 0.1
2N3055A
MJ15015, MJ15016
ICEV
− 5.0 mAdc
− 1.0
2N3055A
MJ15015, MJ15016
ICEV
mAdc
− 30
− 6.0
2N3055A
MJ15015, MJ15016
IEBO
− 5.0 mAdc
− 0.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(t = 0.5 s non−repetitive)
2N3055A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc)
MJ15015, MJ15016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 2 and 3)
IS/b
1.95 −
3.0 −
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 7.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS (Note 3)
hFE
10 70
20 70
5.0 −
VCE(sat)
Vdc
− 1.1
− 3.0
− 5.0
VBE(on)
0.7 1.8
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain − Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055A, MJ15015
MJ15016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS (2N3055A only) (Note 3)
fT
Cob
0.8 6.0 MHz
2.2 18
60 600
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRESISTIVE LOAD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
td
tr
ts
tf
− 0.5 ms
− 4.0 ms
− 3.0 ms
− 6.0 ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
http://onsemi.com
2


Part Number 2N3055A
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
Total Page 6 Pages
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