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  ON Semiconductor Electronic Components Datasheet  

2N2219 Datasheet

Small Signal Switching Transistor

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2N2219 pdf
2N2219, 2N2219A,
2N2219AL
Small Signal Switching
Transistor
NPN Silicon
Features
MILPRF19500/251 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
50
Collector Base Voltage
VCBO
75
Emitter Base Voltage
VEBO
6.0
Collector Current Continuous
IC 800
Total Power Dissipation @ TA = 25°C
PT 0.8
Total Power Dissipation @ TC = 25°C
PT 3.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO39
CASE 205AB
(2N2219, 2N2219A)
TO5
CASE 205AA
(2N2219AL)
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2219/A
JANTX2N2219/A
TO39
Bulk
JANTXV2N2219/A
JAN2N2219AL
JANTX2N2219AL
TO5
Bulk
JANTXV2N2219AL
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1
Publication Order Number:
2N2219/D



  ON Semiconductor Electronic Components Datasheet  

2N2219 Datasheet

Small Signal Switching Transistor

No Preview Available !

2N2219 pdf
2N2219, 2N2219A, 2N2219AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IE = 10 mAdc)
V(BR)CEO
Vdc
2N2219
30
2N2219A/AL
50
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
CollectorEmitter Cutoff Current
(VCE = 30 Vdc)
(VCE = 50 Vdc)
CollectorBase Cutoff Current
(VCB = 50 Vdc)
(VCB = 60 Vdc)
(VCB = 60 Vdc)
(VCB = 75 Vdc)
2N2219
2N2219A/AL
All
2N2219
2N2219A/AL
2N2219
2N2219
2N2219A/AL
2N2219A/AL
IEBO
ICES
ICBO
10 mAdc
10 mAdc
10 nAdc
10 nAdc
10 nAdc
10 nAdc
10 mAdc
10 nAdc
10 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
((IICC
=
=
150
500
mAdc,
mAdc,
VVCCEE
=
=
10
10
Vdc)
Vdc)
Collector Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219/A/AL
2N2219/A/AL
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219
2N2219A/AL
hFE
VCE(sat)
VBE(sat)
2N2219
2N2219A/AL
|hfe|
hfe
35
50
50 325
75 325
75
100
100 300
30
0.4
0.3
1.6
1.0
0.6 1.3
0.6 1.2
2.6
2.0
2.5 12
50
75
Vdc
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
SWITCHING CHARACTERISTICS
TurnOn Time
(Reference Figure in MILPRF19500/251)
Cobo
Cibo
2N2219
2N2219A/AL
ton
pF
8.0
pF
25
40
35
ns
TurnOff Time
(Reference Figure in MILPRF19500/251)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2N2219
2N2219A/AL
toff
ns
250
300
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2



  ON Semiconductor Electronic Components Datasheet  

2N2219 Datasheet

Small Signal Switching Transistor

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2N2219 pdf
2N2219, 2N2219A, 2N2219AL
PACKAGE DIMENSIONS
DETAIL X
U
RF
NOTE 5
B
A
B
PC
L
A
SEATING
PLANE
K
3X D NOTES 4 & 6
0.007 (0.18MM) A B S C M
TO5 3Lead
CASE 205AA
ISSUE B
U
E
T
NOTE 7
DETAIL X
H
M
C
N
J
2
13
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.89 9.40 0.350 0.370
B 8.00 8.51 0.315 0.335
C 6.10 6.60 0.240 0.260
D 0.41 0.53 0.016 0.021
E 0.23 3.18 0.009 0.125
F 0.41 0.48 0.016 0.019
H 0.71 0.86 0.028 0.034
J 0.73 1.02 0.029 0.040
K 38.10 44.45 1.500 1.750
L 6.35 --- 0.250 ---
M 45_BSC
45_BSC
N 5.08 BSC
0.200 BSC
P --- 1.27 --- 0.050
R 1.37 BSC
0.054 BSC
T --- 0.76 --- 0.030
U 2.54 --- 0.100 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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3




Part Number 2N2219
Description Small Signal Switching Transistor
Maker ON Semiconductor
Total Page 4 Pages
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