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  ON Semiconductor Electronic Components Datasheet  

MMBD6050LT1 Datasheet

Switching Diode

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MMBD6050LT1 pdf
MMBD6050LT1
Switching Diode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
70
200
500
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Rating
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
VR 70 − Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IF − 0.1 mAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
IFM(surge)
0.55
0.85
0.7
1.1
Vdc
Reverse Recovery Time (Figure 1)
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)
IF
− 4.0 ns
Capacitance
(VR = 0 V)
IFM(surge) − 2.5
pF
© Semiconductor Components Industries, LLC, 2006
1
3
CATHODE
1
ANODE
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
5A M G
G
1
5A = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBD6050LT1 SOT−23 3,000 / Tape & Reel
MMBD6050LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBD6050LT3 SOT−23 10,000/Tape & Reel
MMBD6050LT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.


  ON Semiconductor Electronic Components Datasheet  

MMBD6050LT1 Datasheet

Switching Diode

No Preview Available !

MMBD6050LT1 pdf
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
MMBD6050LT1
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
TA = 85°C
TYPICAL CHARACTERISTICS
10
TA = −40°C
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.1
0.01
0.001
1.2 0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
2


Part Number MMBD6050LT1
Description Switching Diode
Maker ON
Total Page 3 Pages
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