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  ON Semiconductor Electronic Components Datasheet  

MMBD301L Datasheet

SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

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MMBD301L pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
Order this document
by MBD301/D
MBD301
MMBD301LT1
Motorola Preferred Devices
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 Volts
PF
280
2.8
200 mW
2.0 mW/°C
Operating Junction
Temperature Range
TJ °C
– 55 to +125
Storage Temperature Range
DEVICE MARKING
Tstg
– 55 to +150
°C
MMBD301LT1 = 4T
1
2
CASE 182– 02, STYLE 1
(TO–226AC)
2
CATHODE
1
ANODE
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
3
CATHODE
1
ANODE
Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
V(BR)R
CT
IR
VF
VF
30
— — Volts
0.9 1.5 pF
13 200 nAdc
0.38 0.45 Vdc
0.52 0.6 Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1


  ON Semiconductor Electronic Components Datasheet  

MMBD301L Datasheet

SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

No Preview Available !

MMBD301L pdf
MBD301 MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 500
f = 1.0 MHz
2.4
400
2.0 KRAKAUER METHOD
1.6 300
1.2 200
0.8
100
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
TA = 100°C
75°C
25°C
6.0 12 18 24
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
0.1
30 0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
1.2
SINUSOIDAL
GENERATOR
IF(PEAK)
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
SAMPLING
OSCILLOSCOPE
W(50 INPUT)
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MMBD301L
Description SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
Maker ON
Total Page 4 Pages
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