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P0903BTG Datasheet Preview

P0903BTG Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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P0903BTG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BTG
TO-220
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 9.5m
ID
50A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.7
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
50
35
200
40
250
8.6
65
33
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
3
70
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
25
1 1.6
3
V
±250 nA
25
µA
250
50 A
1 SEP-24-2004



Niko
Niko

P0903BTG Datasheet Preview

P0903BTG Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

P0903BTG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BTG
TO-220
Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 25A
VDS = 10V, ID = 25A
11 16
m
7.5 9.5
32 S
DYNAMIC
Input Capacitance
Ciss
1200 1800
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
600 1000
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
VDS = 10V, VGS = 10V,
ID = 25A
VDS = 15V, RL = 1
350 500
25 50
15
10
6 16
120 250
Turn-Off Delay Time2
td(off)
ID 50A, VGS = 10V, RGEN = 24
40 90
Fall Time2
tf
105 200
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IS = 25A, VGS = 0V
50
150
0.9 1.3
Reverse Recovery Time
trr
70
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
200
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
0.043
pF
nC
nS
A
V
nS
A
µC
REMARK: THE PRODUCT MARKED WITH “P0903BTG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 SEP-24-2004


Part Number P0903BTG
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker Niko
Total Page 5 Pages
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