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New Jersey Semiconductor
New Jersey Semiconductor

U2T205 Datasheet Preview

U2T205 Datasheet

POWER DARLINGTONS

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U2T205 pdf
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
POWER DARLINGTONS
10 Amp, 150V, Planar NPN
FEATURES
• High Current Gain: up to 2000 min @ lc = 5A
• Low Saturation Voltage: as low as 1.5V max @ lc = 5A
• High Voltage: up to 150V min VCER
• Monolithic Design Incorporating Multiple-Emitter Techniques
• Triple-Diffused Planar Construction
BA5ez
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Emitter Base Voltages,
D.C. Col lector Current .
Peak Collector Current
Base 1 Current
Power Dissipation
Ambient
D Case ....
Lion to Case
nperature Range
MECHANICAL SPECIFICATIONS
TO-33
U2T101
U2T1D5
80V 150V
6V
12V
5A
10A .
0 5A
6V
12V
5A
. 10A. .
0.5A
1W ... 1W .
5W . . 5W
20°C/W
-65-C to 200°C
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
U2T101
U2T105
U2T201
U2T205
3 PIN TO-66
U2T201
U27205
eov ..... i5ov
.. 6V
12V
.. 5A
. 10A
0.5A
6V
.12V
5A
10A
0.5A
. 2.5W ...... 2.5W
25W ....... 25W
4-C/W
. -65'Cto200'C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors




New Jersey Semiconductor
New Jersey Semiconductor

U2T205 Datasheet Preview

U2T205 Datasheet

POWER DARLINGTONS

No Preview Available !

U2T205 pdf
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
U2T101 U2T105 U2T201 U2T205
Test
U2T101 i U2T201 U2T105 & U2T305
Symbol
Mln.
Max.
Win.
Max. Units
Test Conditions
D.C. Current Gain
(Note 1)
hre
2000
- 1000
- - lc = 1.0A, VOE = 2V, R,IE = IK
D.C, Current Gain
•(Note 1)
h 2000
1000 _.
1 = 5A, V = 5V, R = 100
Collector Saturation Voltage
(Note 1)
VCE(sat)
IC =5A,RB6=100
1.5 . _. 2.5 V
U2T101, 20h I,, = 5mA
U2T105, 205: 1,, = 10mA
Collector-Emitter
Breakdown Voltage
(Note 1)
BVCE,
80
150 „ V
lc = 25mA, RB|E = 2.2K, RHE = 100
Collector Cutoff
R,,E = 2.2K, RB!E = 100
lea
1.0
1.0 ,A
UST101,201:Vct = 80V
U2T105, 205. V= 150V
Collector Cutoff
Collector Capacitance
A,C. Current Gain
Delay Time
Switching RiseTlme
Speeds Storage Time
Fall Time
ICER
Ci*0
h,.
td
t.
t,
t,
_ 1.0
100
5
100 Typ.
300 Typ.
600 Typ.
500 Typ.
R,IE = 2.2K, R8I£ = 100, T = 150°C
—, 1.0 mA
U2T101, 201:VCE = 80V
U2T105, 205: VCE = 150V
100 Pf Vce, = 10, IE = 0, f = lMHz
5 lc = l.OA, V= 10V, f = 10MHz, RUj= 100
100 Typ,
400 Typ.
ns VCC = 30V,
ns
500 Typ.
500 Typ.
ns uiflOl, 201: IB (on) = 1, (off) = 5mA,
U2T105, 205: 1, (on) = 1, (off) = 10mA,
ns RB!E=100
Hole: 1. Pulse width = 300 lit: duty cycle <2%.
Maximum Safe Operating Area
U2T101&105
s\\. 1
>
TA = 25'C
Duty Cycle - 2.5%
>ulse Wiaih -- 1ms
rbuty Cycle - 10%
PUlf.,W dth = 1 ms
\jv_ Vj\
^
PI
iycle - 25%
e VVidth~~l ms
s>
\_V
8i
\\
\
i — U2T105
UZTW1
Maximum Safe Operating Area
U2T201 & 205
S s\
o,c \—-^. \eN\Width - 'ims
\
Duty cycle = 25%
A
Pul!< Wldth = 1ms
•Out / Cycle = 1
\c = 100-C
I—U2T205
— U2T201
1 2 5 1 0 2 0 5080100150
Vc( — COLLECTOR -EMITTER VOLTAGE (V)
1 2 5 10 40 SO 80100150
Vct — COLLECTOR - EMITTER VOLTAGE (V)
D.C. Current Gain vi. Collector Current
U2T101, U2TI05, U2T201, U2T205
10,000
Vci s= SVdc
R. , = 100(1
.01 .1 1.0 10
I,. — COLLECTOR CURRENT(A)




Part Number U2T205
Description POWER DARLINGTONS
Maker New Jersey Semiconductor
Total Page 2 Pages
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