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New England Semiconductor
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JAN2N2919 Datasheet Preview

JAN2N2919 Datasheet

(JAN2N2919 / JAN2N2920) Transistor

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JAN2N2919 pdf
The documentation and process conversion
measures necessary to comply with this document
shall be completed by 3 October 2005.
INCH-POUND
MIL-PRF-19500/355K
3 July 2005
SUPERSEDING
MIL-PRF-19500/355J
8 July 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
* 1.3 Maximum ratings, unless otherwise specified, TC =+25°C.
PT (1)
TA = +25°C
PT (2)
TC = +25°C
IC
VCBO
VCEO
VEBO
One Both One Both
section sections section sections
TJ and TSTG
mW mW
mW
W mA V dc V dc V dc
°C
dc
300 600 750 1.25
70 60 6 -65 to +200
30
(1) For TA > +25°C, derate linearly 1.71 mW/°C, one section; 3.43 mW/°C, both sections.
(2) For TC > +25°C, derate linearly 4.286 mW/°C, one section; 7.14 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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New England Semiconductor
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JAN2N2919 Datasheet

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JAN2N2919 pdf
MIL-PRF-19500/355K
1.4 Primary electrical characteristics of each individual section, unless otherwise specified, TC =+25°C.
hFE1
|hfe|
VCE(SAT)
VCE = 5 V dc
IC = 10 µA dc
2N2919 2N2919L
2N2920 2N2920L
2N2919U
2N2920U
Min 60
Max 240
175
600
VCE = 5 V dc
IC = 0.5 mA dc
f = 20 MHz
3.0
20
IC = 1 mA dc
IB = 100 µA dc
V dc
0.3
1.5 Primary electrical matching characteristics of each individual section, unless otherwise specified, TC =+25°C.
hFE 21
hFE 22
|VBE1 - VBE2 |1
|(VBE1 - VBE2)TA |1
|(VBE1 - VBE2)TA |2
VCE = 5 V dc
IC = 100 µA dc
(1)
VCE = 5 V dc
IC = 10 µA dc
VCE = 5 V dc
IC = 100 µA dc
TA = +25°C and -55°C
VCE = 5 V dc
IC = 100 µA dc
TA = +125°C and +25°C
mV dc
mV dc
Min 0.9
Max 1.0
5
0.8
(1) The larger number will be placed in the denominator.
mV dc
1.0
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
- Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch or
http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2




New England Semiconductor
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JAN2N2919 Datasheet

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MIL-PRF-19500/355K
Dimensions
Symbol
CD
CD1
CH
HT
LC
LC1
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Inches
Millimeters Notes
Min Max Min Max
.335 .370 8.51 9.40
.305 .335 7.75 8.51
.140 .260 3.56 6.60
.009 .041 0.23 1.04
.140 .160 3.56 4.06
.200 TP
5.08 TP
9
.016 .021 .041 0.53 10
See notes 10, 11, and 12
.016 .019 0.41 0.48 10
.050 1.27 10
.250 6.35
10
.100 2.54
8
.050 1.27 7
.029 .045 0.74 1.14 5, 6
.028 .034 0.71 0.86 4, 5
.010 0.25
45°TP
45°TP
9
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Tab shown omitted.
4. Lead numbers 4 and 8 are omitted on this variation.
5. Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm).
6. TL shall be measured from maximum CD.
7. Details of outline in this zone are optional.
8. CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic
handling.
9. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at
MMC. The device may be measured by direct methods or by the gauge and gauging procedures
described on gauge drawing GS-1.
10. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in
L1 and beyond LL minimum.
11. For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05
mm) maximum.
12. For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches
(44.45 mm) maximum.
13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (2N2919, 2N2919L, 2N2920, and 2N2920L).
3




Part Number JAN2N2919
Description (JAN2N2919 / JAN2N2920) Transistor
Maker New England Semiconductor
Total Page 18 Pages
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