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National Semiconductor Electronic Components Datasheet

74F189SJ Datasheet

64-Bit Random Access Memory with TRI-STATEE Outputs

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74F189SJ pdf
INTEGRATED CIRCUITS
74F189A
64-bit TTL bipolar RAM, inverting
(3-State)
Product specification
IC15 Data Handbook
1990 Feb 23
Philips
Semiconductors



National Semiconductor Electronic Components Datasheet

74F189SJ Datasheet

64-Bit Random Access Memory with TRI-STATEE Outputs

No Preview Available !

74F189SJ pdf
Philips Semiconductors
64-bit TTL bipolar RAM, inverting (3-State)
Product specification
74F189A
FEATURES
High speed performance
Replaces 74F189
Address access time: 8ns max vs 28ns for 74F189
Power dissipation: 4.3mW/bit
Schottky clamp TTL
One chip enable
Inverting outputs (for non-inverting outputs see 74F219A)
3-State outputs
74F189A in 150 mil wide SO is preferred options for new designs
are fully decoded on chip. The outputs are in high impedance state
whenever the chip enable (CE) is high. The outputs are active only
in the READ mode (WE = high) and the output data is the
complement of the stored data.
TYPE
74F189A
TYPICAL
ACCESS
TIME
5.0ns
TYPICAL
SUPPLY
CURRENT
( TOTAL)
55mA
DESCRIPTION
The 74F189A is a high speed, 64-bit RAM organized as a 16-word
by 4-bit array. Address inputs are buffered to minimize loading and
ORDERING INFORMATION
DESCRIPTION
16-pin plastic Dual In-line Package
16-pin plastic Small Outline (150mil)
ORDER CODE
COMMERCIAL RANGE
VCC = 5V ±10%, Tamb = 0°C to +70°C
N74F189AN
N74F189AD
DRAWING NUMBER
SOT38-4
SOT109-1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
DESCRIPTION
74F (U.L.)
HIGH/LOW
D0 – D3
Data inputs
1.0/1.0
A0 – A3
Address inputs
1.0/1.0
CE Chip enable input (active low)
1.0/2.0
WE Write enable input (active low)
1.0/2.0
Q0 – Q3
Data outputs
150/40
NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state.
LOAD VALUE
HIGH/LOW
20µA/0.6mA
20µA/0.6mA
20µA/1.2mA
20µA/1.2mA
3mA/24mA
PIN CONFIGURATION
A0 1
CE 2
WE 3
D0 4
Q0 5
D1 6
Q1 7
GND 8
16 VCC
15 A1
14 A2
13 A3
12 D3
11 Q3
10 D2
9 Q2
SF00299
LOGIC SYMBOL
4 6 10 12
D0 D1 D2 D3
1 A0
15 A1
14 A2
13 A3
2 CE
3 WE
Q0 Q1 Q2 Q3
VCC = pin 16
GND = pin 8
5 7 9 11
SF00300
1990 Feb 23
2 853–1309 98908



National Semiconductor Electronic Components Datasheet

74F189SJ Datasheet

64-Bit Random Access Memory with TRI-STATEE Outputs

No Preview Available !

74F189SJ pdf
Philips Semiconductors
64-bit TTL bipolar RAM, inverting (3-State)
Product specification
74F189A
IEC/IEEE SYMBOL
RAM 16X4
1
15 0
14
A
0
15
13 1
2 G1
3 1 EN [READ]
1 C2 [WRITE]
4 A,2D A
6
10
12
5
7
9
11
LOGIC DIAGRAM
SF00301
FUNCTION TABLE
INPUTS
OUTPUT
CE WE Dn
LHX
Qn
Complement of stored
data
LLL
High
impedance
HLH
High impedance
HXX
High impedance
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
D0 D1 D2 D3
4 6 10 12
Data buffers
3 WE
2 CE
1
A0
15
A1
14
A2
13
A3
Decoder
Drivers
Address
Decoder
16–word x
4–bit
memory cell
array
OPERATING
MODE
Read
Write “0”
Write “1”
Disable input
VCC = Pin 16
GND = Pin 8
Output buffers
5 7 9 11
Q0 Q1 Q2 Q3
SF00302
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the
operating free air temperature range.)
SYMBOL
PARAMETER
RATING
UNIT
VCC
VIN
IIN
VOUT
Supply voltage
Input voltage
Input current
Voltage applied to output in high output state
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to VCC
V
V
mA
V
IOUT Current applied to output in low output state
48 mA
Tamb
Tstg
Operating free air temperature range
Storage temperature range
0 to +70
–65 to +150
°C
°C
1990 Feb 23
3




Part Number 74F189SJ
Description 64-Bit Random Access Memory with TRI-STATEE Outputs
Maker National
Total Page 10 Pages
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