http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




NXP Semiconductors Electronic Components Datasheet

PSMN020-100YS Datasheet

MOSFET

No Preview Available !

PSMN020-100YS pdf
PSMN020-100YS
N-channel 100V 20.5mstandard level MOSFET in LFPAK
Rev. 02 — 7 January 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 100 V
- - 43 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 106 W
Tj junction temperature
Avalanche ruggedness
-55 -
175 °C
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 43 A; Vsup 100 V;
unclamped; RGS = 50
- - 71 mJ
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
-
VDS = 50 V; see Figure 14 and 15 -
11.8 -
41 -
nC
nC


NXP Semiconductors Electronic Components Datasheet

PSMN020-100YS Datasheet

MOSFET

No Preview Available !

PSMN020-100YS pdf
NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5mstandard level MOSFET in LFPAK
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
-
-
- 37 m
15 20.5 m
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN020-100YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
PSMN020-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
2 of 15


Part Number PSMN020-100YS
Description MOSFET
Maker NXP Semiconductors
Total Page 15 Pages
PDF Download
PSMN020-100YS pdf
Download PDF File
PSMN020-100YS pdf
View for Mobile






Related Datasheet

1 PSMN020-100YS MOSFET NXP Semiconductors
NXP Semiconductors
PSMN020-100YS pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components