http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




NXP Semiconductors Electronic Components Datasheet

PSMN017-80BS Datasheet

MOSFET

No Preview Available !

PSMN017-80BS pdf
PSMN017-80BS
N-channel 80 V 17 mstandard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 10 A; Tj = 100 °C; see
Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 25 A; VDS = 40 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 50 A;
Vsup 80 V; RGS = 50 ; unclamped
Min Typ Max Unit
- - 80 V
- - 50 A
- - 103 W
-55 -
175 °C
-
15.2 29
m
-
13.7 17
m
- 6 - nC
- 26 - nC
- - 55 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN017-80BS Datasheet

MOSFET

No Preview Available !

PSMN017-80BS pdf
NXP Semiconductors
PSMN017-80BS
N-channel 80 V 17 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN017-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source avalanche VGS = 10 V; Tj(init) = 25 °C; ID = 50 A;
energy
Vsup 80 V; RGS = 50 ; unclamped
Min Max Unit
- 80 V
- 80 V
-20 20 V
- 35 A
- 50 A
- 200 A
- 103 W
-55 175 °C
-55 175 °C
- 260 °C
- 50 A
- 200 A
- 55 mJ
PSMN017-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN017-80BS
Description MOSFET
Maker NXP Semiconductors
Total Page 14 Pages
PDF Download
PSMN017-80BS pdf
Download PDF File
PSMN017-80BS pdf
View for Mobile






Related Datasheet

1 PSMN017-80BS MOSFET NXP Semiconductors
NXP Semiconductors
PSMN017-80BS pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components