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NXP Semiconductors Electronic Components Datasheet

PMV160UP Datasheet

1.2A P-channel Trench MOSFET

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PMV160UP pdf
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb 25 °C
--
-8 -
[1] -
-
-20 V
8V
-1.2 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
resistance
- 170 210 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
D
G
S
017aaa257


NXP Semiconductors Electronic Components Datasheet

PMV160UP Datasheet

1.2A P-channel Trench MOSFET

No Preview Available !

PMV160UP pdf
NXP Semiconductors
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV160UP
TO-236AB
4. Marking
Description
plastic surface-mounted package; 3 leads
Table 4. Marking codes
Type number
PMV160UP
[1] % = placeholder for manufacturing site code
Marking code[1]
NH%
Version
SOT23
PMV160UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
2 of 16


Part Number PMV160UP
Description 1.2A P-channel Trench MOSFET
Maker NXP Semiconductors
Total Page 16 Pages
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