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NXP Semiconductors Electronic Components Datasheet

BLL1214-35 Datasheet

L-band radar LDMOS driver transistor

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BLL1214-35 pdf
DISCRETE SEMICONDUCTORS
DATA SHEETwww.datasheet4u.com
M3D381
BLL1214-35
L-band radar LDMOS driver
transistor
Product specification
2002 Sep 27


NXP Semiconductors Electronic Components Datasheet

BLL1214-35 Datasheet

L-band radar LDMOS driver transistor

No Preview Available !

BLL1214-35 pdf
Philips Semiconductors
L-band radar LDMOS driver transistor
Product specification
BLL1214-35
www.dFaEtaAsTheUeRt4Eu.Scom
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
2
Top view
3
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
(V) (W) (dB) (%)
Pulsed class-AB;
t = 1 ms; δ = 10 %
1200 to 1400 36 35 >13 >43
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
VGS
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
under RF conditions; Th 25 °C
65
MAX.
75
±15
110
+150
200
UNIT
V
V
W
°C
°C
2002 Sep 27
2


Part Number BLL1214-35
Description L-band radar LDMOS driver transistor
Maker NXP Semiconductors
Total Page 8 Pages
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