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NXP Semiconductors Electronic Components Datasheet

BLF573S Datasheet

HF / VHF power LDMOS transistor

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BLF573S pdf
BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f
VDS
PL
Gp
ηD
(MHz)
(V)
(W) (dB) (%)
CW
225 50
300 27.2 70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
‹ Average output power = 300 W
‹ Power gain = 27.2 dB
‹ Efficiency = 70 %
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (HF and VHF band)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Industrial, scientific and medical applications
„ Broadcast transmitter applications


NXP Semiconductors Electronic Components Datasheet

BLF573S Datasheet

HF / VHF power LDMOS transistor

No Preview Available !

BLF573S pdf
NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF573 (SOT502A)
1 drain
2 gate
3 source
BLF573S (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11
3
[1]
22
3
sym112
11
3
[1]
22
3
sym112
Table 3. Ordering information
Type number Package
Name Description
Version
BLF573
- flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
BLF573S
-
earless flanged LDMOST ceramic package, 2 leads
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
5. Thermal characteristics
Min Max Unit
- 110 V
0.5 +11 V
- 42 A
65 +150 °C
- 225 °C
BLF573_BLF573S
Product data sheet
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ
Rth(j-c)
thermal resistance from Tcase = 80 °C; PL = 300 W [1] 0.21
junction to case
Unit
K/W
[1] Rth(j-c) is measured under RF conditions.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
2 of 16


Part Number BLF573S
Description HF / VHF power LDMOS transistor
Maker NXP Semiconductors
Total Page 16 Pages
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