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PESD18VF1BSF Datasheet

Ultra low capacitance bidirectional ESD protection diode

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PESD18VF1BSF pdf
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
20 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD)
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
Bidirectional ESD protection of one line
Ultra low diode capacitance Cd = 0.28 pF
High reverse standoff voltage VRWM = 18 V
ESD protection up to ±10 kV according to IEC 61000-4-2
3. Applications
NFC antenna protection
Protection of high-speed and standard data lines with high signal levels
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- 0.28 0.45 pF
- - 18 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1 cathode (diode 1)
K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DSN0603-2 (SOD962-2)
12
sym045
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NXP Semiconductors Electronic Components Datasheet

PESD18VF1BSF Datasheet

Ultra low capacitance bidirectional ESD protection diode

No Preview Available !

PESD18VF1BSF pdf
NXP Semiconductors
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD18VF1BSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PESD18VF1BSF
Marking code
J
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IPPM peak pulse current
tp = 8/20 µs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
MIL-STD-883; human body model;
HBM
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Device stressed with ten non-repetitive ESD pulses.
Min Max Unit
[1] -
1A
-45 125 °C
-45 125 °C
-65 150 °C
[2] -
[2] -
-
10 kV
15 kV
10 kV
PESD18VF1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 11


Part Number PESD18VF1BSF
Description Ultra low capacitance bidirectional ESD protection diode
Maker NXP
Total Page 11 Pages
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