| Description | PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −2 −3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5250T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE... |
| Features |
• Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery char... |
| Datasheet |
 PBSS5250T Datasheet - 75.70KB |
