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LA6H0912-500 Datasheet

LDMOS Avionics Radar Power Transistor

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LA6H0912-500 pdf
BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 01 — 5 March 2009
www.datasheet4u.com
1. Product profile
Objective data sheet
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(MHz)
VDS PL
Gp
ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
960 to 1200
50 500 17
50 20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %:
N Output power = 500 W
N Power gain = 17 dB
N Efficiency = 50 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (960 MHz to 1215 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

LA6H0912-500 Datasheet

LDMOS Avionics Radar Power Transistor

No Preview Available !

LA6H0912-500 pdf
NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
www.datasheet4u.com
1.3 Applications
I L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
[1]
3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLA6H0912-500 -
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT634A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 100 V
0.5 13 V
- 54 A
65 +150 °C
- 200 °C
5. Thermal characteristics
Table 5.
Symbol
Zth(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
Tcase = 85 °C; PL = 500 W
tp = 100 µs; δ = 10 %
tp = 200 µs; δ = 10 %
tp = 300 µs; δ = 10 %
tp = 100 µs; δ = 20 %
Typ Unit
<tbd> K/W
<tbd> K/W
<tbd> K/W
<tbd> K/W
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
2 of 8


Part Number LA6H0912-500
Description LDMOS Avionics Radar Power Transistor
Maker NXP
Total Page 8 Pages
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