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NXP Semiconductors Electronic Components Datasheet

BU1706AB Datasheet

Silicon Diffused Power Transistor

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BU1706AB pdf
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 1.5 A; IB = 0.3 A
ICM = 1.5 A; IB(on) = 0.3 A
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
100
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT404
PIN DESCRIPTION
1 base
2 collector
3 emitter
mb collector
PIN CONFIGURATION
mb
2
13
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20ms period
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to mounting
base
Thermal resistance junction to ambient
CONDITIONS
minimum footprint, FR4 board
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1750
850
5
8
3
5
100
4
100
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP. MAX. UNIT
- 1.25 K/W
55 - K/W
February 1998
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

BU1706AB Datasheet

Silicon Diffused Power Transistor

No Preview Available !

BU1706AB pdf
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AB
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 1
ICES
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = 1500 V
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 12 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 1.5 A; IB = 0.3 A
IC = 1.5 A; IB = 0.3 A
IC = 5 mA; VCE = 10 V
IC = 400 mA; VCE = 3 V
IC = 1.5 A; VCE = 1 V
MIN.
-
-
-
-
750
-
-
8
12
5
TYP.
-
-
-
MAX.
1.0
20
2.0
UNIT
mA
µA
mA
- 1 mA
- -V
- 1.0
- 1.3
--
18 35
7-
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton Turn-on time
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICon = 1.5 A; IBon = -IBoff = 0.3 A
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
1.1 1.5
5 6.5
0.75 1.0
µs
µs
µs
2.0 3.0
0.25 0.6
µs
µs
2.2 3.3
0.2 0.7
µs
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
300R
1R
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
February 1998
2
Rev 1.000


Part Number BU1706AB
Description Silicon Diffused Power Transistor
Maker NXP
Total Page 7 Pages
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