| Description | 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits Easy... |
| Features |
and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of haz... |
| Datasheet |
 BLL8H1214LS-500 Datasheet - 204.20KB |
