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BLC6G22-130 Datasheet

UHF power LDMOS transistor

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BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp ηD IMD3 ACPR
(MHz)
(V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA
2110 to 2170
28 30 16 31 37 [1] 40 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
x Output power = 30 W (AV)
x Gain = 16 dB
x Efficiency = 31 %
x IMD3 = 37 dBc
x ACPR = 40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (2000 MHz to 2200 MHz)
s Internally matched for ease of use


NXP Semiconductors Electronic Components Datasheet

BLC6G22-130 Datasheet

UHF power LDMOS transistor

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BLC6G22-130 pdf
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Philips Semiconductors
BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2: Pinning
Pin Description
BLC6G22-130 (SOT895-1)
1 drain
2 gate
3 source
BLC6G22LS-130 (SOT896-1)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3: Ordering information
Type number Package
Name Description
Version
BLC6G22-130 -
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
BLC6G22LS-130 -
plastic earless flanged cavity package; 2 leads
SOT896-1
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- <tbd> A
65 +150 °C
- 225 °C
BLC6G22-130_6G22LS-130_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 9


Part Number BLC6G22-130
Description UHF power LDMOS transistor
Maker NXP
Total Page 9 Pages
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