| Description | NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (I... |
| Features |
Characterized for operation from 136 to 941 MHz Unmatched input and output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB Typical Applications Output stage V... |
| Datasheet |
 AFM907N Datasheet - 1.51MB |
