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NXP Semiconductors Electronic Components Datasheet

1PS70SB14 Datasheet

Dual Schottky barrier diode

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1PS70SB14 pdf
1PS70SB14
Dual Schottky barrier diode
17 December 2012
Product data sheet
1. General description
Dual Planar Schottky barrier diode in series configuration with an integrated guard ring
for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted
Device (SMD) plastic package.
2. Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
3. Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
VR reverse voltage
Per diode
VF forward voltage
Conditions
IF = 10 mA; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 30 V
- - 400 mV
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NXP Semiconductors Electronic Components Datasheet

1PS70SB14 Datasheet

Dual Schottky barrier diode

No Preview Available !

1PS70SB14 pdf
NXP Semiconductors
1PS70SB14
Dual Schottky barrier diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 A1 anode (diode1)
3
2 K2 cathode (diode2)
3 K1, A2 cathode (diode1) and anode
(diode2)
12
SC-70 (SOT323)
Graphic symbol
K1, A2
A1 K2
aaa-004973
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
1PS70SB14
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
7. Marking
Table 4. Marking codes
Type number
1PS70SB14
Marking code
[1]
7%4
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VR reverse voltage
IF forward current
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp < 10 ms; Tj(init) = 25 °C
current
Ptot
total power dissipation
Tamb < 25 °C
Tj junction temperature
Tamb
ambient temperature
1PS70SB14
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2012
Min Max Unit
- 30 V
- 200 mA
- 300 mA
- 600 mA
- 200 mW
- 150 °C
-55 150 °C
© NXP B.V. 2012. All rights reserved
2/9


Part Number 1PS70SB14
Description Dual Schottky barrier diode
Maker NXP
Total Page 9 Pages
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