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NXP Semiconductors Electronic Components Datasheet

1PS181 Datasheet

High-speed double diode

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1PS181 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
1PS181
High-speed double diode
Product data sheet
Supersedes data of April 1996
1996 Sep 03


NXP Semiconductors Electronic Components Datasheet

1PS181 Datasheet

High-speed double diode

No Preview Available !

1PS181 pdf
NXP Semiconductors
High-speed double diode
Product data sheet
1PS181
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode (k1)
cathode (k2)
common anode
21
21
Top view
3
3
MAM082
Marking code: A3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge
t = 1 μs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
85 V
80 V
215 mA
125 mA
500 mA
4A
0.5 A
250 mW
65 +150 °C
150 °C
1996 Sep 03
2


Part Number 1PS181
Description High-speed double diode
Manufacturer NXP
Total Page 8 Pages
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