| Description | The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . ... |
| Features |
D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector –Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector –Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector –Emitter Voltage, VCER... |
| Datasheet |
 NTE219 Datasheet - 24.88KB |
