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NTE
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2N2405 Datasheet Preview

2N2405 Datasheet

Silicon NPN Transistor

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2N2405 pdf
2N2405
Silicon NPN Transistor
General Purpose, Medium Power
TO39 Type Package
Description:
The 2N2405 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Features:
D For Operation at Junction Temperature up to +200C
D Planar Construction fo Low Noise and Low Leakage
D Low Output Capacitance
Absolute Maximum Ratings:
TOCCECComooooptllllealillleteeerltaeccccPtttttrTTooooionArrrrCwBg−−−CeaBEEJrusuamm++erDns2r2iieiettcV55sttnteeosiVtoCrrCil,ptonaVSIalCt..gouTat..eilesogt...,atmnea...gV,,...ipenEPV...e,iB...nCTrVO...agB...CtOuV....Er....oOe.....lt......aR......ga......en......,g......Ve...... C......, ......ET......RJ......
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.....
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65
..
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..
to
. . 120V
. . . 90V
. . . . 7V
. . 140V
. . . . 1A
. . . 5W
. . . 1W
+200C
Storage
Thermal
TReemspisetarantcuere, JRuanncgtioen, TstotgC.a. s. e. ,.
.....
RthJC
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65
.....
to
.
+200C
35C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
CollectorEmitter Sustaining Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
VCEO(sus)
VCER(sus)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
IC = 30mA, IB = 0
IC = 100mA, IB = 0
IC = 100mA, RBE = 10, Note 1
IC = 100mA, RBE = 500, Note 1
IC = 0.1mA, IE = 0, Note 1
IC = 0.1mA, IC = 0, Note 1
VCB = 90V, IE = 0
VCB = 90V, IE = 0, TC = +150C
VBE = 5V, IC = 0
IC = 150mA, IB = 15mA
IC = 50mA, IB = 5mA,
IC = 150mA, IB = 15mA
IC = 50mA, IB = 5mA
Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%.
Min Typ Max Unit
90 − − V
90 − − V
140 − − V
120 − − V
120 − − V
7− − V
− − 0.01 A
− − 10 A
− − 0.01 A
− − 0.5 V
− − 0.2 V
− − 1.1 V
− − 0.9 V



NTE
NTE

2N2405 Datasheet Preview

2N2405 Datasheet

Silicon NPN Transistor

No Preview Available !

2N2405 pdf
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
hFE IC = 10mA, VCE = 10V, Note 1
IC = 150mA, VCE = 10V, Note 1
INCo=te110mA, VCE = 10V, TC = 55C,
35
60 200
20
Dynamic Characteristics
SmallSignal Current Gain
Output Capacitance
hfe
hib
hrb
hob
Cobo
Cib
VCE = 5V, IC = 5mA, f = 1kHz
VCE = 10V, IC = 50mA, f = 20MHz
VCB = 5V, IC = 1mA, f = 1KHz
VCB = 10V, IC = 5mA, f = 1KHz
VCB = 5V, IC = 1mA, f = 1KHz
VCB = 10V, IC = 5mA, f = 1KHz
VCB = 5V, IC = 1mA, f = 1KHz
VCB = 10V, IC = 5mA, f = 1KHz
VCB = 10V, IE = 0
VBE = 0.5V, IC = 0
50 275
6
24 34
48
− − 3x104
− − 3x104
− − 0.5 mho
− − 0.5 mho
− − 15 pF
− − 80 pF
Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%.
.260
(6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500
(12.7)
Min
Emitter
.018 (0.45)
Base
Collector/Case
45
.031 (.793)


Part Number 2N2405
Description Silicon NPN Transistor
Maker NTE
Total Page 2 Pages
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